APTD3216P3C-P22 Kingbright

APTD3216P3C-P22 3.2 x 1.6 mm Phototransistor DESCRIPTION PACKAGE DIMENSIONS z Made with NPN silicon phototransistor chips FEATURES z 3.2 mm X 1.6mm SMD LED, 1.8 mm thickness z Mechanically and spectrally matched to infrared emitting LED lamp z Package: 2000 pcs / reel z Moisture sensitivity level: 3 z RoHS compliant APPLICATIONS z Infrared applied systems z Optoelectronic switches z Photodetector control circuits z Sensor technology RECOMMENDED SOLDERING PATTERN (units : mm tolerance : 0.1) Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.2(0.008 ) unless otherwise noted. 3. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. 4. The device has a single mounting surface. The device must be mounted according to the specifications. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at(or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAO8748 / 1203002243 Rev No: V.4 Date: 01/24/2018 ConfidentialAPTD3216P3C-P22 ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100uA C Collector-to-Emitter Breakdown Voltage V 30 - - V BR CEO 2 Ee = 0mW/cm I = 100uA E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 Ee = 0mW/cm I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 Ee = 20mW/cm V = 10V CE Collector Dark Current I - - 100 nA CEO 2 Ee = 0mW/cm Rise Time(10% to 90%) T - 15 - S R V = 5V CE IC = 1mA RL = 1000 Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.4 1 - mA Ee = 1mW/cm (ON ) = 940nm Range of spectral bandwidth 420 - 1120 nm - 0.1 Wavelength of peak Sensitivity - 940 - nm - p Angle of half sensitivity 21/2 - 40 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 100% 0 -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% 40% 60 -60 20% -75 75 0% 350 450 550 650 750 850 950 1050 1150 90 -90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 Page 2 / 4 2018 Kingbright. All Rights Reserved. Spec No: DSAO8748 / 1203002243 Rev No: V.4 Date: 01/24/2018 Confidential Relative spectral sensitivity (a. u.)