L-53P3BT Kingbright

PHOTOTRANSISTOR Part Number: L-53P3BT Description Features Made with NPN silicon phototansistor chips. z Mechanically and spectrally matched to the infrared emitting LED lamp . z RoHS compliant. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. SPEC NO: DSAD6806 REV NO: V.6 DATE: JAN/06/2012 PAGE: 1 OF 5 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.H.Wu Electrical / Optical Characteristics at TA=25C Symbol Parameter Min. Typ. Max. Units Test Conditions IC=100uA VBR CEO Collector-to-Emitter Breakdown Voltage 30 V Ee=0mW/c IE=100uA VBR ECO Emitter-to-Collector Breakdown Voltage 5 V Ee=0mW/c IC=2mA VCE (SAT) Collector-to-Emitter Saturation Voltage 0.8 V Ee=20mW/c VCE=10V I CEO Collector Dark Current 100 nA Ee=0mW/c TR Rise Time (10 to 90 ) 15 us VCE = 5V IC=1mA TF 15 us RL=1000 Fall Time (90 to 10 ) VCE = 5V I (ON) On State Collector Current 0.7 3 mA Ee=1mW/c =940nm Absolute Maximum Ratings at TA=25C Parameter Max.Ratings Collector-to-Emitter Voltage 30V Emitter-to-Collector Voltage 5V Power Dissipation at (or below) 25C Free Air Temperature 100mW Operating Temperature -40C To +85C Storage Temperature -40C To +85C Lead Soldering Temperature (>5mm for 5sec) 260C SPEC NO: DSAD6806 REV NO: V.6 DATE: JAN/06/2012 PAGE: 2 OF 5 APPROVED: WYNEC CHECKED: Allen Liu DRAWN: Y.H.Wu