WP7113P3C Kingbright

WP7113P3C Phototransistor DESCRIPTION PACKAGE DIMENSIONS Made with NPN silicon phototransistor chips FEATURES Mechanically and spectrally matched to the infrared emitting LED lamp RoHS compliant APPLICATIONS Infrared applied systems Optoelectronic switches Photodetector control circuits Sensor technology Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01 ) unless otherwise noted. 3. Lead spacing is measured where the leads emerge from the package. 4. The specifications, characteristics and technical data described in the datasheet are subject to change without prior notice. ABSOLUTE MAXIMUM RATINGS at T =25C A Parameter Max.Ratings Units Collector-to-Emitter Voltage 30 V Emitter-to-Collector Voltage 5 V Power Dissipation at (or below) 25C Free Air Temperature 100 mW Operating Temperature -40 to +85 C Storage Temperature -40 to +85 C Lead Soldering Temperature(>5mm for 5sec) 260 C Note: 1. Relative humidity levels maintained between 40% and 60% in production area are recommended to avoid the build-up of static electricity Ref JEDEC/JESD625-A and JEDEC/J-STD-033. Page 1 / 4 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019 WP7113P3C ELECTRICAL / OPTICAL CHARACTERISTICS at T =25C A Parameter Symbol Min. Typ. Max. Units Test Conditions I = 100A C Collector-to-Emitter Breakdown Voltage V 30 - - V BR CEO 2 E = 0mW/cm e I = 100A E Emitter-to-Collector Breakdown Voltage V 5 - - V BR ECO 2 E = 0mW/cm e I = 2mA C Collector-to-Emitter Saturation Voltage V - - 0.8 V CE (SAT) 2 E = 20mW/cm e V = 10V CE Collector Dark Current I - - 100 nA 2 CEO E = 0mW/cm e Rise Time(10% to 90%) T - 15 - S R V = 5V CE I = 1mA C R = 1000 L Fall Time(90% to 10%) T - 15 - S F V = 5V CE 2 On State Collector Current I 0.5 2.5 - mA E = 1mW/cm (ON) e = 940nm Range of spectral bandwidth 420 - 1120 nm - 0.1 Wavelength of peak sensitivity - 940 - nm - p 21/2 Angle of half sensitivity - 20 - deg - TECHNICAL DATA RELATIVE SPECTRAL SENSITIVITY vs. WAVELENGTH RELATIVE RADIANT SENSITIVITY vs. ANGULAR DISPLACEMENT 0 100% -15 15 T = 25 C a T = 25 C a -30 30 80% -45 45 60% -60 60 40% 20% 75 -75 0% 350 450 550 650 750 850 950 1050 1150 -90 90 Wavelength (nm) 1.0 0.5 0.0 0.5 1.0 PHOTOTRANSISTOR Relative Collector Current vs. Collector Current vs. Collector Current vs. Ambient Temperature Irradiance Collector-Emitter Voltage 100 160 5 VCE=5V VCE=5V T = 25 C 140 2 a Ee=1mW/cm T = 25 C a 4 10 120 100 3 1 80 2 Ee = 1mW/cm 2 60 0.1 40 2 1 Ee = 0.5mW/cm 20 2 Ee = 0.25mW/cm 0.01 0 0 0.01 0.1 1 10 0 1 2 3 4 5 0 20 40 60 80 100 2 Ambient temperature (C) Collector-emitter voltage V (V) Irradiance Ee (mW/cm ) CE Page 2 / 4 2019 Kingbright. All Rights Reserved. Spec No: DSAE9716 / 1101005148 Rev No: V.11 Date: 04/03/2019 Relative spectral sensitivity (a. u.) Collector current Ic (mA) Collector current (mA) Relative sensitivity Relative collector current (%)