OPE5685 Knowledge-On

24.0 Min 8.7 5.7 7.7 2.0 1.3 Max 5.0 High Speed GaAlAs Infrared Emitter OPE5685 The OPE5685 is GaAlAs infrared emitting diode DIMENSIONS (Unit : mm) that is designed for high power, low forward voltage and high speed rise / fall time. This device is optimized for speed and efficiency at emission wavelength 850nm and has a high radiant efficiency over a wide range of forward current. This device is packaged T1-3/4 plastic package and has wide beam angle with lensed package and cup frame. Especially this device is suited as the emitter of data transmission without cable. FEATURES High speed : 25ns rise time 850nm wavelength Wide beam angle 2- 0.5 Low forward voltage High power and high reliability Available for pulse operating 2.5 APPLICATIONS Emitter of IrDA IR Audio and Telephone Anode High speed IR communication Cathode IR LANs Tolerance : 0.2mm Available for wireless digital data transmission STORAGE Condition : 5C~35C,R.H.60% Terms : within 3 months from production date Remark : Once the package is opened, the products should be used within a day. Otherwise, it should be keeping in a damp proof box with desiccants. * Please take proper steps in order to secure reliability and safety in required conditions and environments for this device. MAXIMUM RATINGS (Ta=25C) Item Symbol Rating Unit Power Dissipation P 150 MW D Forward current I 100 MA F Pulse forward current I 1.0 A FP *1 Reverse voltage V 4.0 V R Operating temp. Topr. -25~ +85 C *2 Soldering temp. Tsol. 260. C *1 .Duty ratio = 1/100, pulse width=0.1ms. *2 .Lead Soldering Temperature (2mm from case for 5sec.). ELECTRO-OPTICAL CHARACTERISTICS (Ta=25C) Item Symbol Conditions Min. Typ. Max. Unit Forward voltage V I=50mA 1.5 2.0 V F F Reverse current I V=4V 10 A R R Capacitance Ct f=1MHz 20 pF Radiant intensity Ie I=50mA 50 mW/sr F Peak emission wavelength p I=50mA 850 nm F Spectral bandwidth 50% I=50mA 45 nm F Half angle I=50mA 22 deg. F Optical rise & fall time(10%~90%) tr/tf I=50mA 25/13 ns F *3 I =50mA DC F Cut off frequency fc 14 MHz +10mA p-p *3 . 10logPo(fc MHz)/Po(0.1 MHz)=-3 7 High Speed GaAlAs Infrared Emitter OPE5685 FORWARD CURRENT Vs. RADIANT INTENSITY Vs. AMBIENT TEMP. FORWARD CURRENT. Ta=25 Ta=25C 200 100 100 50 80 30 10 60 5 3 40 1 0.5 20 0.3 0.1 0 1 3 5 10 30 50 100 200 500 -20 0 20 40 60 80 100 Forward Current IF(mA) Ambient Temperature Ta(C) RELATIVE RADIANT INTENSITY Vs. RELATIVE RADIANT INTENSITY Vs. EMISSION WAVELENGTH. AMBIENT TEMP. 1.0 I =50mA F Ta=25C 0.8 3 2 0.6 1 0.8 0.4 0.5 0.3 0.2 0.2 0.1 0.0 -20 0 20 40 60 80 100 700 750 800 850 900 950 Ambient Temperature Ta(C) Emission Wavelength (nm) FORWARD CURRENT Vs. ANGULAR DISPLACEMENT Vs FORWARD VOLTAGE RELATIVE RADIANT INTENSITY 100 Ta=25C Ta=25C 50 0 10 -10 20 -20 30 30 -30 20 40 -40 50 -50 10 5 -60 60 4 70 -70 3 2 80 -80 90 -90 1 1.0 0.5 0 0.5 1.0 1.0 1.1 1.2 1.3 1.4 1.5 1.6 Relative Radiant intensity Forward Voltage V (V) F 8