C0G (NP0) Dielectric
General Specifications
C0G (NP0) is the most popular formulation of the
temperature-compensating, EIA Class I ceramic materials.
Modern C0G (NP0) formulations contain neodymium, samarium
and other rare earth oxides.
C0G (NP0) ceramics offer one of the most stable capacitor
dielectrics available. Capacitance change with temperature
is 0 30ppm/C which is less than 0.3% C from -55C to
+125C. Capacitance drift or hysteresis for C0G (NP0) ceramics
is negligible at less than 0.05% versus up to 2% for films.
Typical capacitance change with life is less than 0.1% for C0G
(NP0), one-fifth that shown by most other dielectrics. C0G (NP0)
formulations show no aging characteristics.
PART NUMBER (see page 2 for complete part number explanation)
0805 A 101 J A T 2 A
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Packaging
Dielectric Capacitance Capacitance Terminations Special
Size Voltage
Failure
2 = 7 Reel
C0G (NP0) = A Code (In pF) Tolerance Code
(L x W) 6.3V = 6 T = Plated Ni
Rate
4 = 13 Reel
10V = Z B = .10 pF (<10pF) A = Std.
2 Sig. Digits + and Sn
A = Not
U = 4mm TR
16V = Y C = .25 pF (<10pF) Product
Number of Zeros
(01005)
Applicable
25V = 3 D = .50 pF (<10pF) Contact
50V = 5 F = 1% ( 10 pF) Factory For
100V = 1 G = 2% ( 10 pF) 1 = Pd/Ag Term
200V = 2 J = 5% 7 = Gold Plated
500V = 7 K = 10%
Contact Factory
NOT RoHS
For Multiples
COMPLIANT
NOTE: Contact factory for availability of Termination and Tolerance Options for Specific Part
Numbers. Contact factory for non-specified capacitance values.
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051818 C0G (NP0) Dielectric
C0G (NP0) Dielectric
Specifications and Test Methods
Specicfi ations and Test Methods
Parameter/Test NP0 Specification Limits Measuring Conditions
Parameter/Test NP0 Specification Limits Measuring Conditions
Temperature Cycle Chamber
Operating Temperature Range -55C to +125C
Operating Temperature Range -55C to +125C Temperature Cycle Chamber
Capacitance Within specified tolerance
Freq.: 1.0 MHz 10% for cap 1000 pF
Capacitance Within specified tolerance Freq.: 1.0 MHz 10% for cap 1000 pF
1.0 kHz 10% for cap > 1000 pF
<30 pF: Q 400+20 x Cap Value
<30 pF: Q 400+20 x Cap Value 1.0 kHz 10% for cap > 1000 pF
Q
Q
Voltage: 1.0Vrms .2V
30 pF: Q 1000
30 pF: Q 1000 Voltage: 1.0Vrms .2V
Charge device with rated voltage for
100,000M or 1000M - F100,000M or 1000M - F, , Charge device with rated voltage for
Insulation Resistance
Insulation Resistance
60 5 secs @ room temp/humidity
whichever is less
whichever is less 60 5 secs @ room temp/humidity
Charge device with 250% of rated voltage for
Charge device with 250% of rated voltage for
Dielectric Strength No breakdown or visual defects
1-5 seconds, w/charge and discharge current
Dielectric Strength No breakdown or visual defects 1-5 seconds, w/charge and discharge current
limited to 50 mA (max)
limited to 50 mA (max)
Note: Charge device with 150% of rated
Note: Charge device with 150% of rated
voltage for 500V devices.
voltage for 500V devices.
Deflection: 2mm
Appearance No defects
Appearance No defects Deflection: 2mm
Test Time: 30 seconds
CapacitanceCapacitance Test Time: 30 seconds
5% or .5 pF, whichever is greater
5% or .5 pF, whichever is greater
Resistance to VariationVariation
Resistance to
FlexureFlexure
Q Meets Initial Values (As Above)
Q Meets Initial Values (As Above)
StressesStresses
Insulation
Insulation
Initial Value x 0.3
Initial Value x 0.3
Resistance
Resistance
95% of each terminal should be covered Dip device in eutectic solder at 230 5C
Solderability
with fresh solder Dip device in eutectic solder at 230 5Cfor 5.0 0.5 seconds
95% of each terminal should be covered
Solderability
Appearance No defects, <25% leaching of either end terminal for 5.0 0.5 seconds
with fresh solder
Capacitance
Appearance No defects, <25% leaching of either end terminal
2.5% or .25 pF, whichever is greater
Variation
Capacitance Dip device in eutectic solder at 260C for 60
2.5% or .25 pF, whichever is greater
Variation seconds. Store at room temperature for 24 2
Resistance to Q Meets Initial Values (As Above)
Dip device in eutectic solder at 260C for 60sec-
Resistance toSolder Heat hours before measuring electrical properties.
Q Meets Initial Values (As Above)
Insulation
onds. Store at room temperature for 24 2hours
Solder Heat
Meets Initial Values (As Above)
Resistance
Insulation
before measuring electrical properties.
Meets Initial Values (As Above)
Dielectric
Resistance
Meets Initial Values (As Above)
Strength
Dielectric
Meets Initial Values (As Above)
Appearance No visual defects Step 1: -55C 2 30 3 minutes
Strength
Capacitance
Appearance No visual defects Step 1: -55C 2 30 3 minutes
2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes
Variation
Capacitance
2.5% or .25 pF, whichever is greater Step 2: Room Temp 3 minutes
Variation
Thermal
Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes
ThermalShock
Q Meets Initial Values (As Above) Step 3: +125C 2 30 3 minutes
Insulation
Shock
Meets Initial Values (As Above) Step 4: Room Temp 3 minutes
Resistance
Insulation
Meets Initial Values (As Above) Step 4: Room Temp 3 minutes
Dielectric Repeat for 5 cycles and measure after
Resistance
Meets Initial Values (As Above)
Strength 24 hours at room temperature
Dielectric Repeat for 5 cycles and measure after
Meets Initial Values (As Above)
Appearance No visual defects
24 hours at room temperature
Strength
Capacitance
Appearance No visual defects
3.0% or .3 pF, whichever is greater
Variation Charge device with twice rated voltage in
Capacitance
3.0% or .3 pF, whichever is greater
30 pF: Q 350 test chamber set at 125C 2C
Variation
Q
Charge device with twice rated voltage in
Load Life 10 pF, <30 pF: Q 275 +5C/2 for 1000 hours (+48, -0).
(C=Nominal Cap)
30 pF: Q 350 test chamber set at 125C 2C
Q
<10 pF: Q 200 +10C
Load Life
for 1000 hours (+48, -0).
10 pF, <30 pF: Q 275 +5C/2
(C=Nominal Cap)
Insulation Remove from test chamber and stabilize at
<10 pF: Q 200 +10C
Initial Value x 0.3 (See Above)
Resistance room temperature for 24 hours
Remove from test chamber and stabilize at
Insulation
Initial Value x 0.3 (See Above)
Dielectric room temperature for 24 hoursbefore measuring.
Resistance
Meets Initial Values (As Above)
before measuring.
Strength
Dielectric
Meets Initial Values (As Above)
Appearance No visual defects
Strength
Capacitance
5.0% or .5 pF, whichever is greater
Appearance No visual defects
Variation Store in a test chamber set at 85C 2C/
Capacitance 30 pF: Q 350 85% 5% relative humidity for 1000 hours
5.0% or .5 pF, whichever is greater
Load VariationQ 10 pF, <30 pF: Q 275 +5C/2 (+48, -0) with rated voltage applied.
Store in a test chamber set at 85C 2C/
Humidity <10 pF: Q 200 +10C
30 pF: Q 350
85% 5% relative humidity for 1000 hours
Load Q
Insulation Remove from chamber and stabilize at
10 pF, <30 pF: Q 275 +5C/2
(+48, -0) with rated voltage applied.
Initial Value x 0.3 (See Above)
Humidity
Resistance <10 pF: Q 200 +10C room temperature for 24 2 hours
Dielectric before measuring.
Remove from chamber and stabilize at room
Insulation
Initial VMeets Initial Value x 0.3 (See alues (As Above)Above)
Strength
temperature for 24 2 hours before measuring.
Resistance
Dielectric
Meets Initial Values (As Above)
Strength
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