Product Information

0201ZJ1R7PBSTR500

Product Image X-ON

Datasheet
Silicon RF Capacitors / Thin Film 10V 1.7pF .02pFTol ThinFilm 0201

Manufacturer: Kyocera AVX
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1715 ea
Line Total: USD 1.1715

1498 - Global Stock
Ships to you between
Tue. 20 Jun to Thu. 22 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1498 - Global Stock


Ships to you between Tue. 20 Jun to Thu. 22 Jun

MOQ : 1
Multiples : 1

Stock Image

0201ZJ1R7PBSTR500
Kyocera AVX

1 : USD 0.9889
10 : USD 0.7577
100 : USD 0.5081
500 : USD 0.4088
1000 : USD 0.3572

     
Manufacturer
Kyocera AVX
Product Category
Silicon RF Capacitors / Thin Film
RoHS - XON
Y Icon ROHS
Series
Accu - F, Accu - P
Capacitance
1.7 pF
Tolerance
0.02 Pf
Case Code - in
0201
Case Code - mm
0603
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 125 C
Length
0.6 mm
Width
0.3 mm
Height
0.23 mm
Packaging
Reel
Package / Case
0201 (0603 METRIC)
Termination Style
Smd/Smt
Type
Thin Film Chip Capacitors For Rf Signal And Power Application
Voltage Rating Dc
10 VDC
Brand
Kyocera AVX
Dielectric
Thin Film
Factory Pack Quantity :
500
Tradename
Accu - P
Class
Class 2
Cnhts
8532241000
Hts Code
8532240020
Product Type
Ceramic Capacitors
Subcategory
Capacitors
Taric
8532240000
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Thin-Film RF/Microwave Capacitor Technology Accu-P 555 Accu-P Thin-Film Technology This accuracy sets apart these Thin-Film capacitors from THE IDEAL CAPACITOR ceramic capacitors so that the term Accu has been The non-ideal characteristics of a real capacitor can be employed as the designation for this series of devices, an ignored at low frequencies. Physical size imparts inductance abbreviation for accurate. to the capacitor and dielectric and metal electrodes result in resistive losses, but these often are of negligible effect on the circuit. At the very high frequencies of radio communication THIN-FILM TECHNOLOGY 1 (>100MHz) and satellite systems (>1GHz), these effects Thin-film technology is commonly used in producing semi- become important. Recognizing that a real capacitor will conductor devices. In the last two decades, this technology exhibit inductive and resistive impedances in addition to has developed tremendously, both in performance and in capacitance, the ideal capacitor for these high frequencies is process control. Todays techniques enable line definitions of an ultra low loss component which can be fully characterized below 1m, and the controlling of thickness of layers at 100 in all parameters with total repeatability from unit to unit. -2 (10 m). Applying this technology to the manufacture of Until recently, most high frequency/microwave capacitors capacitors has enabled the development of components were based on fired-ceramic (porcelain) technology. Layers where both electrical and physical properties can be tightly of ceramic dielectric material and metal alloy electrode paste controlled. are interleaved and then sintered in a high temperature oven. The thin-film production facilities at AVX consist of: This technology exhibits component variability in dielectric Class 1000 clean rooms, with working areas under quality (losses, dielectric constant and insulation resistance), laminar-flow hoods of class 100, (below 100 particles variability in electrode conductivity and variability in physical per cubic foot larger than 0.5m). size (affecting inductance). An alternate thin-film technology has been developed which virtually eliminates these vari- High vacuum metal deposition systems for high-purity ances. It is this technology which has been fully incorporated electrode construction. into Accu-P and Accu-P to provide high frequency capaci- Photolithography equipment for line definition down to tors exhibiting truly ideal characteristics. 2.0m accuracy. The main features of Accu-P may be summarized as follows: Plasma-enhanced CVD for various dielectric deposi- tions (CVD=Chemical Vapor Deposition). High purity of electrodes for very low and repeatable ESR. High accuracy, microprocessor-controlled dicing saws for chip separation. Highly pure, low-K dielectric for high breakdown field, high insulation resistance and low losses to frequencies High speed, high accuracy sorting to ensure strict above 40GHz. tolerance adherence. Very tight dimensional control for uniform inductance, unit to unit. Very tight capacitance tolerances for high frequency signal applications. Orientation Marking Alumina (Al O ) 2 3 Electrode Seal (SiNO) Dielectric (SiO / SiNO) 2 Electrode Alumina (Al O ) 2 3 Terminations ACCU-P CAPACITOR STRUCTURE 6

Tariff Desc

8532.25.00 45 no--Dielectric of paper or plastics Free

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