PGH75N16 75 vg 1600 olts C IR C U IT O U T L I N E D R A W IN G Dimension:mm P a rt o f D i o d e B r i dg e & T h yr i s to r Ma x i mu m Ra t in g s Parameter Symbol Unit Conditions Max.RatedValue T =125 C 75 AverageRectifiedOutputCurrent Non-BiasedforThyristor Io (AV) 3-PhaseFull A TC=101 WaveRectified 75 BiasedforThyristor 125150 OperatingJunctionTemperatureRange Tjw -40 +150 Tj125 ,CannotbeBiasedforThyristor Tstg -40 +125 StorageTemperatureRange AC1 Viso 2500 V IsolationVoltage TerminaltoBase,AC1min. 2.4 2.8 M5 Mounting Greased F M5 2.4 2.8 MountingTorque Terminal GateTerminal Thermal Characteristics Parameter Symbol Unit Conditions MaximumValue () R 0.06 / th(c-f) ThermalResistance CasetoFin,Total,Greased (6 ) Part of Diode Bridge(6 Arm.) Maximum Rating Parameter Symbol Max.RatedValue Unit *1 VRRM 1600 V RepetitivePeakReverseVoltage *1 VRSM 1700 V Non-RepetitivePeakReverseVoltage Parameter Symbol Unit Conditions Max.RatedValue *1 50Hz 1 I 600 A FSM SurgeForwardCurrent HalfSineWave,1Pulse,Non-Repetitive *1 2 2 210ms A I t 1800 I Squaredt 400 Hz f AllowableOperatingFrequency *11 ValuePer1Arm.(6 ) Part of Diode Bridge(6 Arm.) Electrical Characteristics Parameter Symbol Conditions Unit MaximumValue *1 Tj=125, V =V IRM RM RRM 5 mA PeakReverseCurrent *1 Tj=25, I =75A VFM FM 1.25 V PeakForwardVoltage () R 0.09 / th(j-c) JunctiontoCase,Total ThermalResistance *11 ValuePer1Arm. () Part of Thyristor(1 Arm.) Maximum Rating Parameter Symbol Max.RatedValue Unit *2 VDRM 1600 V RepetitivePeakOff-StateVoltage *2 VDSM 1700 V Non-RepetitivePeakOff-StateVoltage *2 CannotbeBiasedforThyristor Parameter Symbol Conditions Max.RatedValue Unit 50Hz 1 ITSM 1200 A SurgeOn-StateCurrent HalfSineWave,1Pulse,Non-Repetitive 2 2 I t 210ms 7200 A ISquaredt V =2/3V , I =2Io, Tj=125 D DRM TM A/s di/dt 100 I =200mA, di /dt=0.2A/s CriticalRateofRiseofTurned-OnCurrent G G P 5 W GM PeakGatePower P 1 W G(AV) AverageGatePower I 2 A GM PeakGateCurrent V 10 V GM PeakGateVoltage V 5 V RGM PeakGateReverseVoltage Electrical Characteristics MaximumValue Parameter Symbol Conditions Unit Min Typ Max Tj=125, V =V IDM DM DRM 15 mA PeakOff-StateCurrent V Tj=25, ITM=75A 1.20 V TM PeakOff-StateVoltage Tj=40 200 Tj= 25 I V =6V, I =1A 100 mA GT D T GateCurrenttoTrigger Tj=125 50 Tj=40 4.0 Tj= 25 2.5 VGT VD=6V, IT=1A V GateVoltagetoTrigger Tj=125 2.0 VGD Tj=125, VD=2/3VDRM 0.25 V GateNon-TriggerVoltage dv/dt Tj=125, VD=2/3VDRM 500 V/s CriticalRateof RiseofOff-StateVoltage Tj=125, ITM=Io, VD=2/3VDRM s t q 150 dv/dt=20V/s, V =100V, di/dt=20A/s Turn-OffTime R