Product Information

LBSS84LT1G

LBSS84LT1G electronic component of Leshan

Datasheet
MOSFET P Trench 50V 130mA 2V @ 250uA 10 Ω @ 100mA,5V SOT-23 (SOT-23-3) RoHS
Manufacturer: Leshan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0286 ea
Line Total: USD 0.57

110968 - Global Stock
Ships to you between
Fri. 03 May to Wed. 08 May
MOQ: 20  Multiples: 20
Pack Size: 20

 More Buying Options & Price Grid(s)

Availability Price Quantity
90559 - Global Stock


Ships to you between
Fri. 03 May to Wed. 08 May

MOQ : 20
Multiples : 20

Stock Image

LBSS84LT1G
Leshan

20 : USD 0.0248
200 : USD 0.0197
600 : USD 0.0169
3000 : USD 0.0143
9000 : USD 0.0129
21000 : USD 0.0122

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

Radio CompanyThe LBSS84LT1G is a MOSFET P Trench 50V 130mA 2V @ 250uA 10 O @ 100mA, 5V SOT-23 (SOT-23-3) RoHS manufactured by Leshan Radio Company. It is a P-type MOSFET with a 50V device breakdown voltage rating, 130mA current rating, and a 2V Vgs(th) threshold voltage. It has an Rds(on) drain-source on resistance of 10 O and a Idss leakage current of 250uA @ 5V. This MOSFET also features a RoHS compliant as well as SOT-23 (SOT-23-3) package type.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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