HSDL-4261 Lite-On

HSDL - 4261 High-Power T-1 (5mm) AlGaAs Infrared (870nm) Lamp Data Sheet Features Description Very HighP ower AlGaAsLED Technology The HSDL-4261 Infrared emitter was designed for ap- plications that require high power, low forward voltage 870nm Wavelength and high speed. It utilizes Aluminum Galium Arsenide T-1 Package (AlGaAs) LED technology and is optimized for speed and Low Cost ecffi iency at emission wavelengths of 870nm. The material used produces high radiant efficiency over a wide range LowF orward Voltage:1.4V a t20mA of currents. The emitter is packaged in clear T-1 (5mm) HighSpeed: 15ns R ise Times package. Applications 5.0 0. Industrial IR Equipments IR PortableI nstruments ConsumerElec tronics (Opticalmouse et c) HighSpeed IR Communications (IR LANs,IR Modems, IRD ongleset c) 5.8 0. IR Audio IR Telephones Part Number .54 Lead Form Shipping Option 0.7 max. HSDL-4261 Straight Bulk CATHODE FLAT 0.50 0.1 1.6 min. 8.7 0. 1.0 min. 1.14 0. Absolute Maximum Ratings at 25C Parameter Symbol Min. Max Unit Reference DCF orward Current I - 100 mA 1 , Fig. 2 FDC Power Dissipation P - 190 mW DISS Reverse Voltage V 5 - V R Operating Temperature T -40 70 C O Storage Temperature T -40 100 C S LED Junction Temperature T - 110 C J Lead Soldering Temperature - 260 for 5 sec C Notes: 1. Derate as shown in Figure6. Electrical Characteristics at 25C Parameter Symbol Min. Typ. Max. Unit Condition Reference Forward Voltage V - 1.4 1.5 V I =20mA Fig.2 F FDC 1.7 1.9 I =100mA Fig. 3 FDC Forward VoltageTemperature DV/DT - -1.5 - mV/C I =20mA Fig. 4 FDC Coefficient -1.3 I =100mA FDC Series Resistance R - 4.1 - Ohms I =100mA S FDC Diode Capacitance C - 80 - pF 0V, 1MHz O Reverse Voltage V 3 14 - V I =100uA R R Thermal Resistance, Junction to Rq - 280 - C/W ja Ambient Optical Characteristics at 25C Parameter Symbol Min. Typ. Max. Unit Condition Reference RadiantOptical Power P - 9 - mW I =20mA O FDC 45 I =100mA FDC Radiant On-AxisI ntensity I - 36 - mW/Sr I =20mA Fig.5 E FDC 180 I =100mA FDC Radiant On-Axis Intensity DI /DT - -0.22 - %/C I =100mA E FDC Temperature Coefficient Viewing Angle 2q - 26 - deg I =20mA Fig. 7 1/2 FDC Peak wavelength l - 870 - nm I =20mA Fig. 1 PK FDC Peak wavelengthTemperature Dl/DT - 0.18 - nm/C I =20mA FDC Coefficient Spectral Width Dl - 47 - nm I =20mA Fig. 1 FDC 52 I =100mA FDC Optical Rise andF all Time t /t - 15 - ns I =500mA r f FPK Duty Factor=33% Bandwidth f - 23 - MHz c Pulse Width=125ns