BTB16-600CW3G, BTB16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. BTB16 600CW3G, BTB16 800CW3G THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction toCase R 2.1 C/W JC Junction toAmbient R 60 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I / mA DRM (V = Rated V , V Gate Open) T = 25C I 0.005 D DRM RRM J RRM T = 125C 2.0 J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.55 V TM (I = 22.5 A Peak) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 33 ) I mA D L GT MT2(+), G(+) 2.0 35 MT2(+), G() 2.0 35 MT2(), G() 2.0 35 Holding Current I 50 mA H (V = 12 V, Gate Open, Initiating Current = 500 mA) D Latching Current (V = 12 V, I = 1.2 x I ) I mA D G GT L MT2(+), G(+) 60 MT2(+), G() 65 MT2(), G() 60 Gate Trigger Voltage (V = 12 V, R = 33 ) V V D L GT MT2(+), G(+) 0.5 1.7 MT2(+), G() 0.5 1.1 MT2(), G() 0.5 1.1 Gate NonTrigger Voltage (T = 125C) V V J GD MT2(+), G(+) 0.2 MT2(+), G() 0.2 MT2(), G() 0.2 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (dI/dt) 8.5 A/ms c (Gate Open, T = 125C, No Snubber) J Critical Rate of Rise of OnState Current dI/dt 50 A/ s (T = 125C, f = 120 Hz, I = 2 x I , tr 100 ns) J G GT Critical Rate of Rise of Off-State Voltage dV/dt 1000 V/ s (V = 0.66 x V , Exponential Waveform, Gate Open, T = 125C) D DRM J 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.