MAC08BT1, MAC08MT1 Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for use in solid state relays, MPU interface, TTL logic and other light industrial or consumer applications. Supplied in surface mount package for use in automated manufacturing. MAC08BT1, MAC08MT1 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions.) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , DRM (V = Rated V , V Gate Open) T = 25C I 10 A D DRM RRM J RRM T = 110C 200 A J ON CHARACTERISTICS Peak OnState Voltage (Note 2) V 1.9 V TM (I = 1.1 A Peak) T Gate Trigger Current (Continuous dc) All Quadrants I 10 mA GT (V = 12 Vdc, R = 100 ) D L Holding Current (Continuous dc) I 5.0 mA H (V = 12 Vdc, Gate Open, Initiating Current = 20 mA) D Gate Trigger Voltage (Continuous dc) All Quadrants V 2.0 V GT (V = 12 Vdc, R = 100 ) D L DYNAMIC CHARACTERISTICS Critical Rate of Rise of Commutation Voltage (dv/dt) 1.5 V/ s c (f = 250 Hz, I = 1.0 A, Commutating di/dt = 1.5 A/mS TM OnState Current Duration = 2.0 mS, V = 200 V, DRM Gate Unenergized, T = 110C, C Gate Source Resistance = 150 , See Figure 10) Critical RateofRise of Off State Voltage dv/dt 10 V/ s (V = Rated V , T = 110C, Gate Open, Exponential Method) pk DRM C 2. Pulse Test: Pulse Width 300 sec, Duty Cycle 2%. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol Parameter V TM V Peak Repetitive Forward Off State Voltage DRM on state I Peak Forward Blocking Current DRM I H I at V V Peak Repetitive Reverse Off State Voltage RRM RRM RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage + Voltage off state TM I I at V H DRM DRM I Holding Current H Quadrant 3 V TM MainTerminal 2