MAC12D, MAC12M, MAC12N Triacs Silicon Bidirectional Thyristors Designed for high performance fullwave ac control applications where high noise immunity and commutating di/dt are required. www.onsemi.com Features TRIACS Blocking Voltage to 800 Volts OnState Current Rating of 12 Amperes RMS at 70C 12 AMPERES RMS Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3 400 thru 800 VOLTS High Immunity to dv/dt 250 V/ s Minimum at 125C High Commutating di/dt 6.5 A/ms Minimum at 125C MT2 MT1 Industry Standard TO220 Package G High Surge Current Capability 100 Amperes MARKING These Devices are PbFree and are RoHS Compliant* DIAGRAM MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit Peak Repetitive OffState Voltage (Note 1) V V DRM, (T = 40 to 125C, Sine Wave, V J RRM MAC12xG 50 to 60 Hz, Gate Open) AYWW TO220 MAC12D 400 CASE 221A MAC12M 600 1 MAC12N 800 STYLE 4 2 3 On-State RMS Current I 12 A T(RMS) (All Conduction Angles T = 70C) C x = D, M, or N Peak Non-Repetitive Surge Current I 100 A A = Assembly Location TSM (One Full Cycle, 60 Hz, T = 125C) Y = Year J WW = Work Week 2 2 Circuit Fusing Consideration (t = 8.33 ms) I t 41 A sec G = PbFree Package Peak Gate Power P 16 W GM (Pulse Width 1.0 s, T = 80C) C PIN ASSIGNMENT Average Gate Power P 0.35 W G(AV) 1 Main Terminal 1 (t = 8.3 ms, T = 80C) C 2 Main Terminal 2 Operating Junction Temperature Range T 40 to +125 C J 3 Gate Storage Temperature Range T 40 to +150 C stg 4 Main Terminal 2 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION 1. V and V for all types can be applied on a continuous basis. Blocking DRM RRM voltages shall not be tested with a constant current source such that the Device Package Shipping voltage ratings of the devices are exceeded. MAC12DG TO220 50 Units / Rail (PbFree) MAC12MG TO220 50 Units / Rail (PbFree) MAC12NG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 5 MAC12/DMAC12D, MAC12M, MAC12N THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 C/W JC JunctiontoAmbient R 62.5 JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current T = 25C I , 0.01 mA J DRM (V = Rated V , V , Gate Open) T = 125C I 2.0 D DRM RRM J RRM ON CHARACTERISTICS Peak OnState Voltage (Note 2) (I = 17 A) V 1.85 V TM TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT MT2(+), G(+) 5.0 13 35 MT2(+), G() 5.0 13 35 MT2(), G() 5.0 13 35 Hold Current (V = 12 V, Gate Open, Initiating Current = 150 mA) I 20 40 mA D H Latch Current (V = 24 V, I = 35 mA) I mA D G L MT2(+), G(+) 20 50 MT2(+), G() 30 80 MT2(), G() 20 50 Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V D L GT MT2(+), G(+) 0.5 0.78 1.5 MT2(+), G() 0.5 0.70 1.5 MT2(), G() 0.5 0.71 1.5 DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current (di/dt)c 6.5 A/ms (V = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ s, Gate Open, D T = 125C, f = 250 Hz, No Snubber) J Critical Rate of Rise of OffState Voltage dv/dt 250 500 V/ s (V = Rated V , Exponential Waveform, Gate Open, T = 125C) D DRM J Repetitive Critical Rate of Rise of On-State Current di/dt 10 A/ s IPK = 50 A PW = 40 sec diG/dt = 200 mA/ sec f = 60 Hz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. www.onsemi.com 2