MAC12SM, MAC12SN Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed for industrial and consumer applications for full wave control of AC loads such as appliance controls, heater controls, motor www.onsemi.com controls, and other power switching applications. Features TRIACS Sensitive Gate Allows Triggering by Microcontrollers and other 12 AMPERES RMS Logic Circuits 600 thru 800 VOLTS Blocking Voltage to 800 Volts On-State Current Rating of 12 Amperes RMS at 70C High Surge Current Capability 90 Amperes MT2 MT1 Rugged, Economical TO220AB Package G Glass Passivated Junctions for Reliability and Uniformity MARKING Maximum Values of I , V and I Specified for Ease of Design GT GT H DIAGRAM High Commutating di/dt 8.0 A/ms Minimum at 110C Immunity to dV/dt 15 V/ sec Minimum at 110C Operational in Three Quadrants: Q1, Q2, and Q3 These Devices are PbFree and are RoHS Compliant* MAC12SxG AYWW MAXIMUM RATINGS (T = 25C unless otherwise noted) J Rating Symbol Value Unit TO220 1 CASE 221A Peak Repetitive OffState Voltage (Note 1) V V 2 DRM, 3 STYLE 4 (T = 40 to 110C, Sine Wave, V J RRM 50 to 60 Hz, Gate Open) MAC12SM 600 x = M, or N MAC12SN 800 A = Assembly Location On-State RMS Current I 12 A T(RMS) Y = Year (All Conduction Angles T = 70C) C WW = Work Week G = PbFree Package Peak Non-Repetitive Surge Current I 90 A TSM (One Full Cycle Sine Wave, 60 Hz, T = 110C) J PIN ASSIGNMENT 2 2 Circuit Fusing Consideration (t = 8.33 ms) I t 33 A sec 1 Main Terminal 1 Peak Gate Power P 16 W GM 2 Main Terminal 2 (Pulse Width = 1.0 sec, T = 70C) C 3 Gate Average Gate Power P 0.35 W G(AV) (t = 8.3 msec, T = 70C) C 4 Main Terminal 2 Operating Junction Temperature Range T 40 to 110 C J Storage Temperature Range T 40 to 150 C stg ORDERING INFORMATION Stresses exceeding those listed in the Maximum Ratings table may damage the Device Package Shipping device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. MAC12SMG TO220 50 Units / Rail 1. (V and V for all types can be applied on a continuous basis. Blocking DRM RRM (PbFree) voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. MAC12SNG TO220 50 Units / Rail (PbFree) *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 1 Publication Order Number: November, 2014 Rev. 4 MAC12SM/DMAC12SM, MAC12SN THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, JunctiontoCase R 2.2 C/W JC 62.5 JunctiontoAmbient R JA Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds T 260 C L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted Electricals apply in both directions) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Peak Repetitive Blocking Current I , mA DRM I 0.01 (V = Rated V , V Gate Open) T = 25C RRM D DRM RRM J 2.0 T = 110C J ON CHARACTERISTICS Peak On-State Voltage (Note 2) V 1.85 V TM (I = 17 A) TM Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 ) I mA D L GT 1.5 5.0 MT2(+), G(+) 2.5 5.0 MT2(+), G() 2.7 5.0 MT2(), G() Holding Current I 2.5 10 mA H (V = 12 V, Gate Open, Initiating Current = 200 mA) D Latching Current (V = 12 V, I = 5 mA) I mA D G L 3.0 15 MT2(+), G(+) 5.0 20 MT2(+), G() 3.0 15 MT2(), G() Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 ) V V D L GT 0.45 0.68 1.5 MT2(+), G(+) 0.45 0.62 1.5 MT2(+), G() 0.45 0.67 1.5 MT2(), G() DYNAMIC CHARACTERISTICS Critical Rate of Change of Commutating Current (di/dt) 8.0 10 A/ms c (V = 400 V, I = 3.5 A, Commutating dV/dt = 10 V/ s, Gate Open, T = 110C, D TM J f = 500 Hz, Snubber: Cs = 0.01 f, Rs = 15 ) Critical Rate of Rise of Off-State Voltage dV/dt 15 40 V/ s (V = 67% V , Exponential Waveform, R = 1 K , T = 110C) D DRM GK J Repetitive Critical Rate of Rise of On-State Current di/dt 10 A/ s IPK = 50 A PW = 40 sec diG/dt = 1 A/ sec Igt = 100 mA f = 60 Hz Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Quadrant 1 MainTerminal 2 + Symbol Parameter V TM V Peak Repetitive Forward Off State Voltage DRM on state I Peak Forward Blocking Current DRM I H I at V V Peak Repetitive Reverse Off State Voltage RRM RRM RRM I Peak Reverse Blocking Current RRM V Maximum On State Voltage + Voltage off state TM I I at V H DRM DRM I Holding Current H Quadrant 3 V TM MainTerminal 2 www.onsemi.com 2