MCMA200P1800YA-MI V = 2x1800 V RRM Thyristor Module I = 200 A TAV V = 1.12 V T Phase leg Part number MCMA200P1800YA-MI Backside: isolated 3 1 2 6 7 5 4 Features / Advantages: Applications: Package: Y4 Thyristor for line frequency Line rectifying 50/60 Hz Isolation Voltage: V~ 3600 Planar passivated chip Softstart AC motor control Industry standard outline Long-term stability DC Motor control RoHS compliant Direct Copper Bonded Al2O3-ceramic Power converter Soldering pins for PCB mounting AC power control Base plate: DCB ceramic Lighting and temperature control Reduced weight Advanced power cycling Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics. IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190924a 2019 IXYS all rights reservedMCMA200P1800YA-MI Ratings Thyristor Symbol Definition typ. max. Conditions min. Unit T = 25C 1900 V V max. non-repetitive reverse/forward blocking voltage RSM/DSM VJ V max. repetitive reverse/forward blocking voltage T = 25C 1800 V RRM/DRM VJ I V = V 1800 T = 25C 300 A reverse current, drain current R/D VJ R/D V = 1 8 0 0 V T = 1 4 0 C 10 mA VJ R/D V 1.17 V forward voltage drop T I = 2 0 0 A T = 25C T VJ 1.40 V I = 4 0 0 A T I = 2 0 0 A T = 1 2 5 C 1.12 V T VJ I = 4 0 0 A 1.41 V T A I average forward current T = 8 5 C 200 T = 1 4 0 C TAV C VJ RMS forward current I 180 sine 315 A T(RMS) V T = 1 4 0 C 0.83 V threshold voltage T0 VJ for power loss calculation only slope resistance 1.43 m r T R 0.17 K/W thermal resistance junction to case thJC thermal resistance case to heatsink R 0.09 K/W thCH P total power dissipation T = 25C 680 W tot C max. forward surge current t = 10 ms (50 Hz), sine T = 45C 6.00 kA I TSM VJ t = 8,3 ms (60 Hz), sine V = 0 V 6.48 kA R t = 10 ms (50 Hz), sine T = 1 4 0 C 5.10 kA VJ t = 8,3 ms (60 Hz), sine V = 0 V 5.51 kA R kAs value for fusing It t = 10 ms (50 Hz), sine T = 45C 180.0 VJ kAs t = 8,3 ms (60 Hz), sine V = 0 V 174.7 R kAs t = 10 ms (50 Hz), sine T = 1 4 0 C 130.1 VJ kAs t = 8,3 ms (60 Hz), sine V = 0 V 126.3 R junction capacitance C V = 4 0 0 V f = 1 MHz T = 25C 273 pF J R VJ P max. gate power dissipation t = 30 s T = 1 4 0 C 120 W P C GM t = 500 s 60 W P 8 W P average gate power dissipation GAV critical rate of rise of current (di/dt) T = 140C f = 50 Hz repetitive, I = 600 A 100 A/s cr VJ T 0.5 t = 2 0 0 s di /dt = A/s P G I = 0.5A V = V non-repet., I = 200 A 1000 A/s G DRM T critical rate of rise of voltage V = V T = 140C 1000 V/s (dv/dt) cr DRM VJ method 1 (linear voltage rise) R = GK gate trigger voltage V V = 6 V T = 25C 2.5 V D VJ GT T = -40C 2.6 V VJ gate trigger current V = 6 V T = 25C 150 mA I GT D VJ T = -40C 200 mA VJ gate non-trigger voltage V V = V T = 140C 0.2 V GD D DRM VJ gate non-trigger current I 10 mA GD latching current t = 30 s T = 25C 300 mA I VJ L p I = 0.5A di /dt = 0.5 A/s G G holding current I V = 6 V R = T = 25C 200 mA H D GK VJ gate controlled delay time t V = V T = 25C 2 s VJ gd D DRM I = 0.5A di /dt = 0.5 A/s G G turn-off time V = 100 V I = 200A V = V T =125 C 150 s t q R T DRM VJ di/dt = 10 A/s dv/dt = 20 V/s t = 200 s p IXYS reserves the right to change limits, conditions and dimensions. Data according to IEC 60747and per semiconductor unless otherwise specified 20190924a 2019 IXYS all rights reserved