Power Module 1200V 150A IGBT Module RoHS MG12150S-BN2MM Features High short circuit F ast switching and short capability, self limiting tail current short circuit current F ree wheeling diodes 3 IGBT CHIP(Trench+Field with fast and soft reverse Stop technology) recovery V with positive Low switching losses CE(sat) temperature coefficient Applications Agency Approvals High frequency Motion/servo control AGENCY AGENCY FILE NUMBER switching application UPS systems E71639 Medical applications Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T max Max. Junction Temperature 150 C J T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 160 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 200 A C I DC Collector Current C T =80C 150 A C I Repetitive Peak Collector Current t =1ms 300 A CM p P Power Dissipation Per IGBT 625 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 200 A C I Average Forward Current F(AV) T =80C 150 A C I Repetitive Peak Forward Current t =1ms 300 A FRM p 2 2 I t T =125C, t=10ms, V =0V 4350 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12150S-BN2MM 1 2015 Littelfuse, Inc 134 Specifications are subject to change without notice. Revised:05/19/15Power Module 1200V 150A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =6mA 5.0 5.8 6.5 V GE(th) CE GE C I =150A, V =15V, T =25C 1.7 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =150A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 1 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 5 mA CE GE J I Gate Leakage Current V =0V,V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 5 Gint Q Gate Charge V =600V, I =150A , V =15V 1.4 C ge CC C GE C Input Capacitance 10.5 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.4 nF res T =25C 260 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T =25C 30 ns J V =600V t Rise Time CC r T =125C 50 ns J I =150A T =25C 420 ns C J t Turn - off Delay Time d(off) T =125C 520 ns J R =2.4 G T =25C 70 ns J t Fall Time f V =15V T =125C 90 ns J GE T =25C 12 mJ J E Turn - on Energy Inductive Load on T =125C 16 mJ J T =25C 11 mJ J E Turn - off Energy off T =125C 14.5 mJ J I Short Circuit Current t 10S , V =15V T =125C,V =900V 600 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.2 K/W thJC Diode I =150A , V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =150A , V =0V, T =125C 1.65 V F GE J I Max. Reverse Recovery Current 210 A RRM I =150A , V =600V F R Q Reverse Recovery Charge di /dt=-4000A/s 30.0 C rr F T =125C E Reverse Recovery Energy J 13 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.36 K/W thJCD MG12150S-BN2MM 2015 Littelfuse, Inc 2 135 Specifications are subject to change without notice. Revised:05/19/15