Power Module 1200V 15A IGBT Module RoHS MG1215H-XBN2MM Features High le vel of Free wheeling diodes integrationonly one with fast and soft reverse power semiconductor recovery module required for the Industry standard package whole drive with insulated copper Low saturation voltage base plateand soldering and positive temperature pins for PCB mounting coefficient Temperature sense F ast switching and short included tail current Applications AC motor control In verter and power supplies Motion/servo control Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 250 M Mounting Torque Recommended (M5) 2.5 5 Nm d Weight 180 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 25 A C I DC Collector Current C T =80C 15 A C I Repetitive Peak Collector Current t =1ms 30 A CM p P Power Dissipation Per IGBT 105 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J I Average Forward Current 15 A T =25C F(AV) C I Repetitive Peak Forward Current t =1ms 30 A FRM p 2 2 I t T =125C, t=10ms, V =0V 60 A s J R MG1215H-XBN2MM 2016 Littelfuse, Inc 1 199 Specifications are subject to change without notice. Revised:10/05/16Power Module 1200V 15A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =0.6mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =15A, V =15V, T =25C 1.7 2.15 V C GE J V CE(sat) Saturation Voltage I =15A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 0.1 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 1 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 0 Gint Q Gate Charge V =600V, I =15A , V =15V 0.15 C ge CE C GE C Input Capacitance 1.1 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 0.04 nF res T=25C 90 ns J t Turn - on Delay Time d(on) T =125C 90 ns J T=25C 30 ns J t Rise Time r T =125C 50 ns J V =600V CC T=25C 420 ns J I =15A t Turn - off Delay Time C d(off) T =125C 520 ns J R =75 G T=25C 70 ns J t Fall Time V =15V f GE T =125C 90 ns J Inductive Load T=25C 1.5 mJ J E Turn - on Energy on T =125C 2.1 mJ J T=25C 1.1 mJ J E Turn - off Energy off T =125C 1.3 mJ J I Short Circuit Current t 10S , V =15V T =125C , V =900V 60 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 1.2 K/W thJC Diode I =15A, V =0V, T =25C 1.65 2.15 V F GE J V Forward Voltage F I =15A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 150 ns RR I =15A, V =600V F R I Max. Reverse Recovery Current di /dt=-400A/s 16 A RRM F T =125C E Reverse Recovery Energy J 1.1 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 1.5 K/W thJCD MG1215H-XBN2MM 2016 Littelfuse, Inc 2 200 Specifications are subject to change without notice. Revised:10/05/16