Power Module 1200V IGBT Family RoHS MG12300D-BN3MM Series 300A Dual IGBT Features High short circuit F ast switching and short capability, self limiting tail current short circuit current F ree wheeling diodes IGBT CHIP(1200V NPT with fast and soft reverse technology) recovery V with positive L ow switching losses CE(sat) temperature coefficient Applications Motor drives SMPS and UPS Agency Approvals Inverter Welder AGENCY AGENCY FILE NUMBER Converter Induction Heating E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max) T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol Module case exposed to 0.1% ammonium CTI Comparative Tracking Index 350 V chloride solution per UL and IEC standards Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 320 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 450 A C I DC Collector Current C T =75C 300 A C I Repetitive Peak Collector Current t =1ms 600 A CM p P Power Dissipation Per IGBT 1450 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 450 A C I Average Forward Current F(AV) T =75C 300 A C I Repetitive Peak Forward Current t =1ms 600 A FRM p 2 2 I t T =125C, t=10ms, V =0V 14500 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2015 Littelfuse, Inc MG12300D-BN3MM 1 Specifications are subject to change without notice. Revised:05/19/15Power Module 1200V IGBT Family Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =12mA 4.5 5.5 6.5 V GE(th) CE GE C I =300A, V =15V, T =25C 3.2 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =300A, V =15V, T =125C 3.85 V C GE J V =1200V, V =0V, T =25C 2 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V,V =15V, T =125C -400 400 A GES CE GE J R Intergrated Gate Resistor 1.3 Gint Q Gate Charge V =600V, I =300A , V =15V 3.2 C ge CE C GE C Input Capacitance 22 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 1.0 nF res T =25C 110 ns J t Turn - on Delay Time d(on) T =125C 120 ns J T =25C 70 ns J V =600V t Rise Time CC r T =125C 80 ns J I =300A T =25C 550 ns C J t Turn - off Delay Time d(off) T =125C 600 ns J R =3.3 G T =25C 50 ns J t Fall Time f V =15V T =125C 60 ns J GE T =25C 18 mJ J E Turn - on Energy Inductive Load on T =125C 29 mJ J T =25C 14 mJ J E Turn - off Energy off T =125C 22 mJ J t 10S , V =15V psc GE I Short Circuit Current 1200 A SC T =125C,V =900V J CC Junction-to-Case Thermal R 0.085 K/W thJC Resistance (Per IGBT) Diode I =300A , V =0V, T =25C 2.0 V F GE J V Forward Voltage F I =300A , V =0V, T =125C 2.05 V F GE J I Max. Reverse Recovery Current I =300A , V =-600V 300 A RRM F R t Reverse Recovery Time d /dt=6000A/s 350 ns rr iF E Reverse Recovery Energy T =125C 15.2 mJ rec J Junction-to-Case Thermal R 0.15 K/W thJCD Resistance (Per Diode) 2015 Littelfuse, Inc MG12300D-BN3MM 2 Specifications are subject to change without notice. Revised:05/19/15