Power Module 1200V 400A IGBT Module RoHS MG12400D-BN2MM Features High short circuit Fast switching and short capability, self limiting tail current short circuit current F ree wheeling diodes 3 IGBT CHIP(Trench+Field with fast and soft reverse Stop technology) recovery V with positive L ow switching losses CE(sat) temperature coefficient Applications Medical applications Motion/servo control Agency Approvals High frequency switc hing UPS sy stems AGENCY AGENCY FILE NUMBER application E71639 Module Characteristics (T = 25C, unless otherwise specified) J Symbol Parameters Test Conditions Min Typ Max Unit T Max. Junction Temperature 150 C J max T Operating Temperature -40 125 C J op T Storage Temperature -40 125 C stg V Insulation Test Voltage AC, t=1min 3000 V isol CTI Comparative Tracking Index 350 Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M6) 2.5 5 Nm Weight 320 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage T =25C 1200 V CES J V Gate - Emitter Voltage 20 V GES T =25C 580 A C I DC Collector Current C T =80C 400 A C I Repetitive Peak Collector Current t =1ms 800 A CM p P Power Dissipation Per IGBT 1925 W tot Diode V Repetitive Reverse Voltage T =25C 1200 V RRM J T =25C 580 A C I Average Forward Current F(AV) T =80C 400 A C I Repetitive Peak Forward Current 800 A FRM 2 2 I t T =125C, t=10ms, V =0V 30000 A s J R Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG12400D-BN2MM 2016 Littelfuse, Inc 115 1 Specifications are subject to change without notice. Revised:07/21/16Power Module 1200V 400A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =16mA 5.0 5.8 6.5 V GE(th) CE GE C Collector - Emitter I =400A, V =15V, T =25C 1.7 V C GE J V CE(sat) Saturation Voltage I =400A, V =15V, T =125C 1.9 V C GE J V =1200V, V =0V, T =25C 2 mA CE GE J I Collector Leakage Current ICES V =1200V, V =0V, T =125C 10 mA CE GE J I Gate Leakage Current V =0V, V =15V, T =125C -400 400 nA GES CE GE J R Integrated Gate Resistor 1.9 Gint Q Gate Charge V =600V, I =400A , V =15V 3.8 C ge CE C GE C Input Capacitance 28 nF ies V =25V, V =0V, f =1MHz CE GE C Reverse Transfer Capacitance 1.0 nF res T=25C 160 ns J t Turn - on Delay Time d(on) T =125C 170 ns J T=25C 40 ns J t Rise Time r T =125C 45 ns J V =600V CC T=25C 450 ns J I =400A t Turn - off Delay Time C d(off) T =125C 520 ns J R =1.8 G T=25C 100 ns J t Fall Time V =15V f GE T =125C 160 ns J Inductive Load T=25C 20 mJ J E Turn - on Energy on T =125C 30 mJ J T=25C 33 mJ J E Turn - off Energy off T =125C 50 mJ J I Short Circuit Current t 10S , V =15V, T =125C , V =900V 1550 A SC psc GE J CC R Junction-to-Case Thermal Resistance (Per IGBT) 0.065 K/W thJC Diode I =400A, V =0V, T =25C 1.65 V F GE J V Forward Voltage F I =400A, V =0V, T =125C 1.65 V F GE J t Reverse Recovery Time 450 ns RR I =400A, V =600V F R I Max. Reverse Recovery Current di /dt=-8000A/s 75 A RRM F T =125C E Reverse Recovery Energy J 35 mJ rec R Junction-to-Case Thermal Resistance (Per Diode) 0.12 K/W thJCD MG12400D-BN2MM 2016 Littelfuse, Inc 2 116 Specifications are subject to change without notice. Revised:07/21/16