Power Module 1200V 50A IGBT Module RoHS MG1250S-BA1MM Features Ultra Low Loss P ositive Temperature Coefficient High Ruggedness With Fast Free-Wheeling High Short Circuit Diodes Capability Applications Inverter SMPS and UPS Converter Induction Heating Welder Agency Approvals AGENCY AGENCY FILE NUMBER E71639 Module Characteristics (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit R Per IGBT 0.3 K/W thJC Junction-to-Case Thermal Resistance R Per Inverse Diode 0.6 K/W thJCD Torque Module-to-Sink Recommended (M6) 3 5 Nm Torque Module Electrodes Recommended (M5) 2.5 5 Nm Weight 150 g Absolute Maximum Ratings (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Values Unit IGBT V Collector - Emitter Voltage 1200 V CES V Gate - Emitter Voltage 20 V GES T =25C 80 A C I DC Collector Current C T =80C 50 A C T =25C, t =1ms 170 C p I Pulsed Collector Current A Cpuls T =80C, t =1ms 110 C p P Power Dissipation Per IGBT 500 W tot T Junction Temperature Range -40 to +150 C J T Storage Temperature Range -40 to +125 C STG V Insulation Test Voltage AC, t=1min 3000 V isol Diode V Repetitive Reverse Voltage 1200 V RRM T =25C 90 A C I Average Forward Current F(AV) T =80C 60 A C I RMS Forward Current 90 A F(RMS) T =45C, t=10ms, Sine 430 Non-Repetitive Surge Forward J I A FSM Current T =45C, t=8.3ms, Sine 450 J Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG1250S-BA1MM 2015 Littelfuse, Inc 1 43 Specifications are subject to change without notice. Revised:05/19/15Power Module 1200V 50A IGBT Module Electrical and Thermal Specifications (T = 25C, unless otherwise specified) C Symbol Parameters Test Conditions Min Typ Max Unit IGBT V Gate - Emitter Threshold Voltage V =V , I =2mA 5.0 6.2 7.0 V GE(th) CE GE C I =50A, V =15V, T =25C 1.8 V Collector - Emitter C GE J V CE(sat) Saturation Voltage I =50A, V =15V, T =125C 2.0 V C GE J V =1200V, V =0V, T =25C 0.5 mA CE GE J I Collector Leakage Current CES V =1200V, V =0V, T =125C 2 mA CE GE J I Gate Leakage Current V =0V,V =20V -200 200 nA GES CE GE Q Gate Charge V =600V, I =50A , V =15V 611 nC ge CC C GE C Input Capacitance 4.29 ies C Output Capacitance V =25V, V =0V, f =1MHz 0.30 nF oes CE GE C Reverse Transfer Capacitance 0.20 res T =25C 270 ns J t Turn - on Delay Time d(on) T =125C 290 ns J T =25C 60 ns J t Rise Time V =600V CC r T =125C 60 ns J I =50A T =25C 480 ns C J t Turn - off Delay Time d(off) T =125C 550 ns J R =18 G T =25C 60 ns J t Fall Time f T =125C 65 ns V =15V J GE T =25C 6.0 mJ J E Turn - on Energy Inductive Load on T =125C 8.4 mJ J T =25C 3.7 mJ J E Turn - off Energy off T =125C 5.8 mJ J Diode I =50A , V =0V, T =25C 1.9 2.3 V F GE J V Forward Voltage F I =50A , V =0V, T =125C 1.7 2.1 V F GE J t Reverse Recovery Time 180 nS rr I =50A , V =800V F R I Max. Reverse Recovery Current di /dt=-1000A/s 60 A RRM F T =125C Q Reverse Recovery Charge J 7.1 C rr MG1250S-BA1MM 2015 Littelfuse, Inc 2 44 Specifications are subject to change without notice. Revised:05/19/15