TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose Surge Protection - SP11xx Series SC11xx Series RoHS Pb GREEN SC11xx Series Discrete Unidirectional TVS Diode Description Avalanche breakdown diodes fabricated in a proprietary silicon avalanche technology protect each I/O pin to provide a high level of protection for electronic equipment that may experience destructive electrostatic discharges (ESD). These robust diodes can safely absorb repetitive ESD strikes at 30kV (contact and air discharge, IEC 61000- 4-2) without performance degradation. Additionally, each diode can safely dissipate 80A (SC1105) of 8/20s surge current (IEC 61000-4-5 2nd edition) with very low clamping voltages. Pinout and Functional Block Diagram Features ESD, IEC 61000-4-2, Low clamping voltage 30kV contact, 30kV air Low leakage current EFT, IEC 61000-4-4, 40A Moisture Sensitivity PIN1 (5/50ns) Level(MSL -1) Lightning, IEC 61000- Lead free and RoHS nd 4-5 2 edition, 80A compliant (t =8/20s, SC1105) P Applications Switches / Buttons Medical Equipment PIN2 Test Equipment / Notebooks / Desktops / Instrumentation Servers Point-of-Sale Terminals Computer Peripherals Life Support Note: Not Intended for Use in Life Support or Life Saving Applications The products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/16/20 TTVS VS Diode ArDiode Arrraaysys (SP(SPAA Diodes)Diodes) General Purpose Surge Protection - SP11xx Series SC11xx Series Absolute Maximum Ratings Symbol Parameter Value Units T Operating Temperature -40 to 125 C OP T Storage Temperature -55 to 150 C STOR Notes: CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the component. This is a stress only rating and operation of the component at these or any other conditions above those indicated in the operational sections of this specification is not implied. SC1105 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 5.0 V RWM R Breakdown Voltage V I =1mA 6.0 7.5 V BR R Reverse Leakage Current I V =5V 1.0 A LEAK R I =40A, t =8/20s, Fwd 9.3 V PP p 1 Clamp Voltage V C I =80A, t =8/20s, Fwd 11.8 V PP P 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.04 DYN P Peak Pulse Current I t =8/20s 80 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 660 pF I/O-GND SC1115 Electrical Characteristics (T =25C) OP Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V I =1A 15.0 V RWM R Breakdown Voltage V I =1mA 16.7 V BR R Reverse Leakage Current I V =15V 1.0 A LEAK R 1 Clamp Voltage V I =30A, t =8/20s, Fwd 27.4 V C PP p 2 Dynamic Resistance R TLP, t =100ns, I/O to GND 0.09 DYN P Peak Pulse Current I t =8/20s 30.0 A pp p IEC 61000-4-2 (Contact Discharge) 30 kV 1 ESD Withstand Voltage V ESD IEC 61000-4-2 (Air Discharge) 30 kV 1 Diode Capacitance C Reverse Bias=0V, f=1MHz 180 pF I/O-GND 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revision: 10/16/20