VHF28-12IO5 Littelfuse

VHF28-12IO5 electronic component of Littelfuse
VHF28-12IO5 Littelfuse
VHF28-12IO5 SCR Modules
VHF28-12IO5  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of VHF28-12IO5 SCR Modules across the USA, India, Europe, Australia, and various other global locations. VHF28-12IO5 SCR Modules are a product manufactured by Littelfuse. We provide cost-effective solutions for SCR Modules, ensuring timely deliveries around the world.

Part No. VHF28-12IO5
Manufacturer: Littelfuse
Category: SCR Modules
Description: SCR Modules BIPOLAR MODULE-THYRISTOR FO
Datasheet: VHF28-12IO5 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 17.388
5$ 17.388
10$ 17.0299
20$ 16.7016
50$ 15.866
100$ 15.6472
200$ 15.6472
N/A

Obsolete
   
Manufacturer
Product Category
Category
Factory Pack Quantity :
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the VHF28-12IO5 from our SCR Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the VHF28-12IO5 and other electronic components in the SCR Modules category and beyond.

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VHF 28 I = 32 A Half Controlled dAVM V = 800-1600 V RRM Single Phase Rectifier Bridge with Freewheeling Diode 3 2 2 V V Type RSM RRM 1 1 3 V V 6 DSM DRM VV 6 4 4 900 800 VHF 28-08io5 1300 1200 VHF 28-12io5 1500 1400 VHF 28-14io5 8 8 1700 1600 VHF 28-16io5 Symbol Test Conditions Maximum Ratings Features Package with DCB ceramic base plate I T = 85 C, module 28 A dAV K Isolation voltage 3600 V~ I module 32 A dAVM Planar passivated chips I , I per leg 23 A FRMS TRMS fast-on terminals I , I T = 45 C t = 10 ms (50 Hz), sine 300 A UL registered E 72873 FSM TSM VJ V = 0 V t = 8.3 ms (60 Hz), sine 330 A R T = T t = 10 ms (50 Hz), sine 270 A VJ VJM Applications V = 0 V t = 8.3 ms (60 Hz), sine 300 A R Supply for DC power equipment 2 2 I t T = 45 C t = 10 ms (50 Hz), sine 440 A s DC motor control VJ 2 V = 0 V t = 8.3 ms (60 Hz), sine 455 A s R 2 T = T t = 10 ms (50 Hz), sine 365 A s VJ VJM 2 Advantages V = 0 V t = 8.3 ms (60 Hz), sine 370 A s R Easy to mount with two screws (di/dt) T = 125 C repetitive, I = 50 A 150 A/ s cr VJ T Space and weight savings f =50 Hz, t =200 s P Improved temperature and power V = 2/3 V D DRM cycling I = 0.3 A, non repetitive, I = 1/2 I 500 A/ s G T dAV di /dt = 0.3 A/ s G (dv/dt) T = T V = 2/3 V 1000 V/ s cr VJ VJM DR DRM Dimensions in mm (1 mm = 0.0394 ) R = method 1 (linear voltage rise) GK V 10 V RGM P T = T t = 30 s 10 W GM VJ VJM p I = I t = 500 s 5W T TAVM p t = 10 ms 1W p P 0.5 W GAVM T -40...+125 C VJ T 125 C VJM T -40...+125 C stg V 50/60 Hz, RMS t = 1 min 3000 V~ ISOL I 1 mA t = 1 s 3600 V~ ISOL M Mounting torque (M5) 2-2.5 Nm d (10-32 UNF) 18-22 lb.in. Weight 50 g Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. for resistive load IXYS reserves the right to change limits, test conditions and dimensions. 2000 IXYS All rights reserved 1 - 3VHF 28 Symbol Test Conditions Characteristic Values 10 1: I , T = 125C GT VJ I , I V = V V = V T = T 5mA R D R RRM D DRM VJ VJM 2: I , T = 25C GT VJ V T = 25 C 0.3 mA VJ 3: I , T = -40C GT VJ V G V , V I , I = 45 A T = 25 C 1.6 V T F T F VJ V For power-loss calculations only (T = 125 C) 0.9 V T0 VJ 3 r 15 m T 2 1 6 1 V V = 6 V T = 25 C 1.0 V GT D VJ 5 T = -40 C 1.2 V VJ 4 I V = 6 V T = 25 C 65 mA GT D VJ T = -40 C 80 mA VJ T = 125 C 50 mA VJ 4: P = 0.5 W GAV V T = T V = 2/3 V 0.2 V GD VJ VJM D DRM 5: P = 1 W GM I T = T V = 2/3 V 5mA GD VJ VJM D DRM I , T = 125C 6: P = 10 W GD VJ GM 0.1 I I = 0.3 A t = 30 s T = 25 C 150 mA 1 10 100 1000 L G G VJ mA di /dt = 0.3 A/ s T = -40 C 200 mA I G VJ G T = 125 C 100 mA VJ Fig. 1 Gate trigger range I T = 25 C V = 6 V R = 100 mA H VJ D GK 1000 t T = 25 C V = 1/2 V 2 s gd VJ D DRM T = 25C VJ I = 0.3 A di /dt = 0.3 A/ s G G s t T = 125 C, I = 15 A, t = 300 s, V = 100 V typ. 150 s q VJ T P R t gd Q di/dt = -10 A/ s, dv/dt = 20 V/ s, V = 2/3 V 75 C r D DRM typ. Limit 100 R per thyristor (diode) DC current 1.4 K/W thJC per module 0.35 K/W R per thyristor (diode) DC current 2.0 K/W thJK per module 0.5 K/W d Creepage distance on surface 12.6 mm S 10 d Creepage distance in air 6.3 mm A 2 a Max. allowable acceleration 50 m/s 1 10 100 1000 mA I G Fig. 2 Gate controlled delay time t gd 2000 IXYS All rights reserved 2 - 3 750

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