MA46H146 / MAVR-000146 GaAs Flip-Chip Multiplier Varactor Diode Rev. V5 0.50 Gamma Abrupt Features Chip Layout Very Low Total Capacitance < 0.06 pF Extremely High Q > 15 K Silicon Nitride Passivation Polymer Scratch Protection Surface Mount Configuration RoHS* Compliant Description Front View (Circuit Side) The MA46H146 / MAVR-000146 is a gallium arsenide flip chip multiplier varactor. These devices are facilitated on MOVPE epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. These flip-chip diodes are fully passivated with silicon nitride and have an additional polymide layer for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. Back View (Operator Side) These GaAs flip chip devices are ideally suited for millimeter wave frequency tunable filters, where extremely low parasitics are required to maintain reasonable Q. In addition, this product can be used in multiplier circuits, for 2X and 3X output Schematic frequencies in the millimeter wave frequency bands Flip-chip tuning varactor equivalent circuit R C (V) L S J S Ordering Information Part Number Package MA46H146 100 piece gel pack Cparasitic MAVR-000146-12030W 100 piece waffle pack * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA46H146 / MAVR-000146 GaAs Flip-Chip Multiplier Varactor Diode Rev. V5 0.50 Gamma Abrupt Electrical Specifications: T = +25C, Gamma = 0.45 - 0.55, V = 0 to 20 V A R Parameter Test Conditions Units Min. Typ. Max. V = 0 V, 1 MHz 0.063 R V = 4 V, 1 MHz 0.033 0.040 0.060 R Total Capacitance pF V = 10 V, 1 MHz 0.032 R V = 25 V, 1 MHz 0.030 R Total Capacitance Ratio V = 0 V / 25 V 2.1 R Q Minimum V = 4 V, 50 MHz 15600 R Breakdown Voltage 10 A V 26 Reverse Current 18 V nA 50 1,2 Absolute Maximum Ratings Handling Procedures Parameter Absolute Maximum Please observe the following precautions to avoid Reverse Voltage -26 V damage: Forward Current 50 mA Static Sensitivity Operating Temperature -65C to +150C These electronic devices are sensitive to Storage Temperature -65C to +150C electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques Mounting Temperature <200C should be used when handling these devices. 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. MACOM does not recommend sustained operation near these survivability limits. Typical Performance Curves Capacitance vs. Reverse Bias Voltage Resistance 4 GHz vs. Reverse Bias Voltage 0.100 4 0.075 3 0.050 2 0.025 1 0.000 0 0 5 10 15 20 25 0 5 10 15 20 25 Reverse Bias (V) Reverse Bias (V) 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: