MA4AGP907 MA4AGFCP910 AlGaAs Rev. V5 Flip Chip PIN Diodes Features Chip Dimensions Low Series Resistance MA4AGP907 and MA4AGFCP910 Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation Polyimide Scratch Protection RoHS Compliant Description M/A-COM s MA4AGP907 and MA4AGFCP910 are Aluminum Gallium Arsenide (AlGaAs) flip-chip PIN diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes exhibit an extremely low RC product, (0.1ps) and 2-3nS switching characteristics. They are fully passivated with silicon nitride and have an added polymer layer for scratch protection. The protective coating prevents damage to the junction and the anode air-bridge during handling and assembly. Applications The ultra low capacitance of the MA4AGP907 and MA4AGFCP910 allows their use through millimeter Notes: frequencies for RF switches and switched phase 1. Gold Pads 14M thick. shifter applications. The diodes are designed for use 2. Yellow areas indicate ohmic gold mounting pads. in pulsed or CW applications, where single digit nS 3. Dimensions A thru F are identical for both devices switching speed is required. For surface mount assembly, the low capacitance of these switches make them ideal for use in microwave multi-throw INCHES MM switch assemblies, where the series capacitance of DIM MIN. MAX. MIN. MAX. each off port adversely loads the input and affects VSWR. A 0.026 0.027 0.6604 0.6858 B 0.0135 0.0145 0.3429 0.3683 Absolute Maximum Ratings T = +25C AMB C 0.0065 0.0075 0.1651 0.1905 (unless otherwise specified) D 0.0043 0.0053 0.1092 0.1346 Parameter Absolute Maximum MA4AGP907 -50V E 0.0068 0.0073 0.1727 0.1854 Reverse Voltage MA4AGFCP910 -75V F 0.0182 0.0192 0.4623 0.4877 Operating Temperature -55C to +125C Storage Temperature -55C to +150C Junction Temperature +175C Dissipated Power 50mW ( RF & DC ) C.W. Incident Power +23 dBm Mounting Temperature +280C for 10 seconds 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MA4AGP907 MA4AGFCP910 AlGaAs Rev. V5 Flip Chip PIN Diodes Electrical Specifications T = +25C AMB MA4AGP907 MA4AGFCP910 Parameter Symbol Conditions Units Typ. Max. Typ. Max. MA4AGP907 -5V,1MHz Total Capacitance C pF 0.025 0.030 0.018 0.021 T MA4AGFCP910 -10V,1MHz 1 Total Capacitance C -5V, 10GHz pF 0.020 0.018 0.021 T Series Resistance R +10mA, 1MHz 5.2 7.0 S 2 R +10mA, 10GHz 4.2 5.2 6.0 Series Resistance S Forward Voltage V +10mA V 1.33 1.45 1.33 1.45 F MA4AGP907 V = -50V R 3 A 10 10 Reverse Leakage Current I R MA4AGFCP910 V = -75V R T 4 RISE 10GHz nS 2 2 Switching Speed T FALL Carrier Lifetime T I = 10mA / I = 6mA nS 4 L F REV Notes: 1) Capacitance is determined by measuring the isolation of a single series diode in a 50 transmission line at 10GHz. 2) Series resistance is determined by measuring the insertion loss of a single series diode in a 50 transmission line at 10GHz. 3) The max rated V ( Reverse Voltage ) is sourced and the resultant reverse leakage current, Ir, is R measured to be <10 A 4) Switching speed is measured between 10% and 90% or 90% to 10% RF voltage for a single series mounted diode. Driver delay is not included. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: