MA4BN1840-1 MACOM

Monolithic HMIC Integrated Bias Network MA4BN1840-1 Rev. V6 Features Broad Bandwidth Specified 18 to 40 GHz Usable 10 GHz to 55 GHz Extremely Low Insertion Loss High RF-DC Isolation Rugged, Fully Monolithic Glass Encapsulation J1 & J2 Matched to 50 RoHS* Compliant Applications Aerospace & Defense ISM Description The MA4BN1840-1 is a fully monolithic broadband TM bias network utilizing MACOMs HMIC Yellow areas denote bond pads (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the formation of silicon vias by imbedding them in low loss, low dispersion glass along with high Q spiral Schematic inductors and MIM capacitors. The close proximity between elements and the combination of silicon and glass gives this HMIC device low loss and high J1 (IN) J2 (OUT) performance with exceptional repeatability through millimeter frequencies. Large bond pads facilitate the use of low inductance ribbon bonds, while the gold backside metallization provides the RF and DC ground. This allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS compliant solders. RF & DC Ground The MA4BN1840-1 bias network is ideally suited for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return. The device can also be used as a DC Bias bi-directional re-active coupler for Schottky detector circuits. DC currents up to 150 mA and DC voltages up to 50 V may be used. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Monolithic HMIC Integrated Bias Network MA4BN1840-1 Rev. V6 o Electrical Specifications: Freq. = 18 - 40 GHz, T = +25 C on Wafer Measurements A Parameter Min. Typ. Max. Units Insertion Loss 0.15 0.2 dB RF - DC Isolation 30 35 dB Input Return Loss 15 17 dB Output Return Loss 15 17 dB Maximum Operating Conditions +25C (Unless otherwise noted) Parameter Value RF CW Incident Power 10 Watts DC Bias Current +/- 150 mA DC Bias Voltage +/- 50 V Operating Temperature -65C to +125C Storage Temperature -65C to +150C Die Attach Temperature 320C for 20 sec DIE Dimensions Millimeters Mils Dim. Min. Nom. Max. Min. Nom. Max. A 1.420 - 1.470 55.9 - 57.9 B 1.020 - 1.070 40.2 - 42.1 C - 0.813 - - 32.0 - D - 0.408 - - 16.1 - E - 0.816 - - 32.1 - F 0.497 - 0.547 19.5 - 21.5 - 0.130 - - 5.1 - RF Bond Pads J1 & J2 - 0.152 - - 6.0 - - 0.151 - - 5.9 - DC Bond Pad - 0.122 - - 4.8 - Chip Thickness - 0.125 - - 4.9 - 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: