Wideband Distributed Amplifier 30 kHz - 40 GHz MAAM-011275-DIE Rev. V3 1 Features Functional Schematic Wide Frequency Range: 30 kHz - 40 GHz 15 dB Gain 9 10 8 3 - 8 V DC, 200 mA 12 11 22 dBm P1dB 22 GHz 14 Integrated Power Detector with a Detector 7 Reference Voltage Generator 6 50 Input and Output Match 13 RoHS* Compliant 5 Die Size: 2.3 x 1.0 x 0.05 mm 15 Applications Instrumentation and Communication Systems 1 Description Backside Die 2 GND MAAM-011275-DIE is an easy-to-use, wideband 3 4 16 amplifier that operates from 30 kHz to 40 GHz. The amplifier provides 15 dB gain, 22 dBm output power 1. Image not to scale. and 5.3 dB noise figure. It is matched to 50 with typical return loss better than 13 dB. 2 MAAM-011275-DIE is suitable for a wide range of Pad Configuration applications in instrumentation and communication systems. Pad Pad Name Description 1,3,5,7, GND Ground 14,15,16 2 RF RF Input IN 4 V Gate Voltage 1 G1 6 RF /V RF Output OUT DD 8 DET Output Detector OUT 9 DET Reference Detector REF 10 DET Detector Bias BIAS Ordering Information 11 V Drain Voltage DD 12 V Auxiliary Drain Voltage DAUX MAAM-011275-DIE Die in Gel Pack 13 V Gate Voltage 2 G2 2. Backside of die must be connected to RF, DC and thermal ground. * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 111 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Wideband Distributed Amplifier 30 kHz - 40 GHz MAAM-011275-DIE Rev. V3 Electrical Specifications: T = 25 C, V = 7 V, Z = 50 C DD 0 Parameter Test Conditions Units Min. Typ. Max. Gain 1 - 40 GHz dB 13.5 15 Gain Flatness 1 - 40 GHz dB 0.75 Input Return Loss 1 - 40 GHz dB 15 Output Return Loss 1 - 40 GHz dB 13 P1dB 22 GHz dBm 21 P3dB 22 GHz dBm 22.5 24 P = +2 dBm / tone, 22 GHz IN Output IP3 dBm 33 tone spacing = 2 MHz 26 GHz 5.3 Noise Figure dB 40 GHz 6.8 3 Drain Current Quiescent bias mA 200 3. Set by adjusting VG1 as outlined in operating conditions on page 3. 4,5 Absolute Maximum Ratings Handling Procedures Please observe the following precautions to avoid damage: Input Power 17 dBm Static Sensitivity Drain Supply Voltage 10 V These electronic devices are sensitive to VG1 -4 V < VG1 < 0 V electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques VG2 -3.5 V < VG2 < +4 V should be used when handling these HBM Class 1A Drain Supply Current 340 mA devices. 6,7 Junction Temperature +150C Operating Temperature -40C to +85C Storage Temperature -65C to +150C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 7. Junction Temperature (T ) = T + * ((V * I) - (P - P )) J A JC OUT IN Typical thermal resistance ( ) = 11.9 C/W. JC 222 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: