MAAM02350-A2 Wide Band GaAs MMIC Amplifier Rev. V3 0.2 - 3.0 GHz Features Functional Schematic High Gain: 18 dB Output Power: +14 dBm Noise Figure: 4 dB Single Supply: +6 V Gain Flatness: 0.75 dB 1 8 Lead-Free 8-lead Ceramic Package RoHS* Compliant and 260C Reflow Compatible 2 7 Description 6 3 M/A-COMs MAAM02350-A2 is a wide band, MMIC amplifier housed in a small, lead-free, 8-lead 4 5 ceramic package. It includes two integrated gain stages and employs resistive feedback to obtain flat gain and a good, 50-ohm, input and output impedance match over a very wide bandwidth. The MAAM02350-A2 operates from a single +6 V supply. It is monolithic, requiring only DC blocking capaci- 1 Pin Configuration tors, no other external components are needed. Pin No. Function Pin No. Function The MAAM02350-A2 functions well as a generic IF, 1 Ground 5 Ground driver or buffer amplifier where high gain, low noise 2 Ground 6 RF Output figure, excellent linearity and low power consumption 3 RF Input 7 Ground are important. Because of its wide bandwidth, the MAAM02350-A2 can be used in numerous 4 Ground 8 V DD commercial and government system applications, 1. The package bottom must be connected to RF and DC such as wireless communications, EW and radar. ground. The MAAM02350-A2 is manufactured in-house using a reliable, 0.5-micron, GaAs MESFET process. This product is 100% RF tested to ensure 2,3 compliance to performance specifications. Absolute Maximum Ratings Parameter Absolute Maximum V +10 V DD Input Power +20 dBm Ordering Information Current 150 mA Part Number Package 4 Channel Temperature +150C MAAM02350-A2 8-Lead Ceramic (CR-3) Operating Temperature -55C to +100C Storage Temperature -65C to +150C MAAM02350-A2G Gull Wing (CR-10) 2. Exceeding any one or combination of these limits may cause permanent damage to this device. 3. M/A-COM does not recommend sustained operation near these survivability limits. 4. Typical thermal resistance ( ) = +80C/W jc * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MAAM02350-A2 Wide Band GaAs MMIC Amplifier Rev. V3 0.2 - 3.0 GHz Electrical Specifications: T = 25C, V = +6 V, Z = 50 A DD 0 Parameter Test Conditions Units Min. Typ. Max. Gain 0.2 - 3.0 GHz, P = -30 dBm dB 16 18 IN Noise Figure 0.2 - 3.0 GHz dB 4.0 4.5 Gain Flatness 0.2 - 3.0 GHz, P = -30 dBm dB 0.5 IN Input VSWR 0.2 - 3.0 GHz, P = -30 dBm Ratio 1.7:1 IN Output VSWR 0.2 - 3.0 GHz, P = -30 dBm Ratio 1.3:1 IN Output 1 dB Compression 0.2 - 3.0 GHz dBm +14 Input IP3 0.2 - 3.0 GHz, P = -30 dBm dBm +6 IN Reverse Isolation 0.2 - 3.0 GHz, P = -30 dBm dB 30 IN Bias Current mA 65 100 Application Schematic Handling Procedures Please observe the following precautions to avoid V DD damage: 1 8 2 7 Static Sensitivity RF RF OUT IN Gallium Arsenide Integrated Circuits are sensitive 6 3 to electrostatic discharge (ESD) and can be 100 pF 100 pF damaged by static electricity. Proper ESD control 4 5 techniques should be used when handling these devices. Lead-Free CR-10 (MAAM02350-A2G) Lead-Free CR-3 (MAAM02350-A2) Reference Application Note M538 for lead-free solder reflow recommendations. Meets JEDEC moisture sensitivity level 1 requirements. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: