MABT-011000-14230G

MABT-011000 Integrated Bias Network Rev. V1 2 - 18 GHz Features Functional Schematic Specified over Broad Bandwidth: 2 - 18 GHz B (DC Bias) Surface Mount Extremely Low Insertion Loss: < 0.3 dB Ground High RF-DC Isolation: > 34 dB Rugged, Fully Monolithic Glass Encapsulation RoHS* Compliant and 260C Reflow Compatible Description The MABT-011000 is a fully monolithic broadband surface mount bias network utilizing MACOMs patented HMIC process. This process allows the formation of silicon vias by imbedding them in low J1 (IN) J2 (OUT ) loss, low dispersion glass along with high Q spiral inductors and MIM capacitors. The close proximity of elements and the combination of silicon and glass give this HMIC device low loss and high Pin Configuration performance with exceptional repeatability through millimeter frequencies. Pin Function Large vias reduce inductance and allow part to be J1 RF Input more easily soldered, while the gold backside metallization provides the RF and DC ground. This J2 RF Output allows for manual or automatic die attach via electrically conductive silver epoxy or RoHS B DC Bias compliant solders. The MABT-011000 bias network is suitable for the DC biasing of PIN diode control circuits. It functions as an RF-DC de-coupling network as well as the DC return and contains a series DC blocking capacitor. 1 Ordering Information DC currents up to 60 mA and DC voltages up to 50 V may be used. Part Number Package MABT-011000-14230G Gel pack MABT-011000-14230W Wafer Frame MABT-011000-14230P 3000 piece reel MABT-011000-14235P 500 piece reel 1. Die quantity varies. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: MABT-011000 Integrated Bias Network Rev. V1 2 - 18 GHz Electrical Specifications: T = 25C A Parameter Test Conditions Units Min. Typ. Max. 2 GHz 0.25 0.50 6 GHz 0.10 0.30 Insertion Loss (J1-J2) dB 12 GHz 0.15 0.40 18 GHz 0.25 0.50 2 GHz 30 34 6 GHz 50 60 RF - DC Isolation (J1-B, J2-B) dB 12 GHz 50 60 18 GHz 40 47 2 GHz 17 23 6 GHz 17 35 Input Return Loss (J1) dB 12 GHz 17 34 18 GHz 17 26 2 GHz 17 22 6 GHz 17 44 Output Return Loss (J2) dB 12 GHz 17 37 18 GHz 17 26 2,3 4 Absolute Maximum Ratings Maximum RF Input De-Rating Curve 37.5 Parameter Absolute Maximum 37.0 DC Bias Voltage 50 V 36.5 DC Bias Current 60 mA 36.0 Operating Temperature -65C to +125C 35.5 Storage Temperature -65C to +150C 2. Exceeding any one or combination of these limits may cause 35.0 permanent damage to this device. 3. MACOM does not recommend sustained operation near these 34.5 survivability limits. 25 35 45 55 65 75 85 Back Surface Temperature (C) 4. Based on testing done at 2.2 GHz. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these HBM class 1B devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: