GaN Amplifier 50 V, 50 W DC - 2700 MHz MAGX-100027-050C0P Rev. V3 Features Optimized for a Multitude of Applications CW and Pulsed Operation: 50 W Output Power Internally Pre-matched 260C Reflow Compatible 50 V Operation 100% RF Tested RoHS* Compliant TO-272S-2 Description Functional Schematic The MAGX-100027-050C0P is a high power GaN on Silicon HEMT D-mode amplifier optimized for DC - 2700 MHz frequency operation. The device supports both CW and pulsed operation with peak output power levels to 50 W (47 dBm) in a plastic package. The MAGX-100027-050C0P is ideally suited for a multitude of applications including military radio RF / V RF / V OUT D IN G communications, digital cellular infrastructure, RF energy, avionics, test instrumentation and RADAR. Typical Performance: Pad V = 50 V, I = 100mA, T = 25C. DS DQ C Measured under pulsed load-pull at optimum Pin Configuration efficiency load impedance, 2.0 dB Compression, 100s pulse width,1ms period, 10% duty cycle 1 RF / V RF Input / Gate IN G Frequency Output Power Gain D (MHz) (dBm) (dB) (%) 2 RF / V RF Output / Drain OUT D 1 650 47.6 27.1 79.1 3 Pad Ground / Source 950 45.6 24.5 79.5 1. The exposed pad centered on the package bottom must be connected to RF, DC and thermal ground. 1200 47.9 22.4 79.7 1600 48.3 19.8 76.3 2000 48.3 19.1 75.4 2400 47.6 18.5 76.5 Ordering Information Part Number Package MAGX-100027-050C0P Bulk Quantity MAGX-100027-050CTP Tape and Reel MAGX-1A0027-050C0P Sample Board * Restrictions on Hazardous Substances, compliant to current RoHS EU directive. 11 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: GaN Amplifier 50 V, 50 W DC - 2700 MHz MAGX-100027-050C0P Rev. V3 RF Electrical Characteristics: T = 25C, V = 50 V, I = 100 mA C DS DQ Note: Performance in MACOM Application Fixture (2400 - 2500 MHz), 50 system Parameter Test Conditions Symbol Min. Typ. Max. Units Small Signal Gain CW, 2500 MHz G - 18.8 - dB SS Power Gain CW, 2500 MHz, 2 dB Gain Compression G - 16.8 - dB SAT Saturated Drain Efficiency CW, 2500 MHz, 2 dB Gain Compression - 72 - % SAT Saturated Output Power CW, 2500 MHz, 2 dB Gain Compression P - 48.4 - dBm SAT 2 Pulsed , 2500 MHz G - 0.02 - Gain Variation (-25C to +85C) dB/C 2 Power Variation (-25C to +85C) Pulsed , 2500 MHz P2dB - 0.004 - dB/C Gain CW, 2500 MHz, P = 32 dBm G - 16.8 - dB IN P Drain Efficiency CW, 2500 MHz, P = 32 dBm - 72 - % IN VSWR = 10:1, No Device Damage Ruggedness: Output Mismatch All phase angles RF Electrical Specifications: T = 25C, V = 50 V, I = 100 mA A DS DQ Note: Performance in MACOM Production Test Fixture, 50 system Parameter Test Conditions Symbol Min. Typ. Max. Units Power Gain CW, 2500 MHz, 2 dB Gain Compression G 14 15.3 - dB SAT Saturated Drain Efficiency CW, 2500 MHz, 2 dB Gain Compression 60 67.5 - % SAT Saturated Output Power CW, 2500 MHz, 2 dB Gain Compression P 48 49.4 - dBm SAT Gain CW, 2500 MHz, P = 33 dBm G 15 16 - dB IN P Drain Efficiency CW, 2500 MHz, P = 33 dBm 58 65 - % IN 2. Pulse details: 100 s pulse width, 1 ms period, 10% Duty Cycle 22 2 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: