XP1050-QJ 2.5 W Power Amplifier Rev. V1 7.1 - 8.5 GHz Features Functional Schematic 15.5 dB Small Signal Gain N/C N/C N/C N/C N/C N/C 47 dBm Third Order Intercept Point (OIP3) 2 W P1dB 20 16 19 24 Integrated Power Detector V 2 V 1 1 18 D D Lead-Free 6 mm 24-lead QFN Package 15 N/C N/C RoHS* Compliant and 260C Reflow Compatible N/C N/C Description RF RF IN OUT The XP1050-QJ is a packaged linear power amplifier that operates from 7.1-8.5 GHz. The device V 1 V DET G 11 provides 15.5 dB gain and 47 dBm Output Third 6 13 V 2 V REF Order Intercept Point (OIP3). The packaged G 7 12 amplifier comes in an industry standard, fully molded 6 mm QFN package and is comprised of a two stage power amplifier with an integrated, temperature N/C N/C N/C N/C GND N/C compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the packaged part. 3 Pin Configuration The device is specifically designed for use in 7 and 8 Pin No. Pin Name Function GHz Point-to-Point radio applications. 1 V 1 Drain 1 Bias D External DC blocks are required. See the reliability 2-3 N/C No Connection note on page 3 for more information. 4 RF RF Input IN 5 V 1 Gate 1 Bias G 6 V 2 Gate 2 Bias G 7-11 N/C No Connection 1,2 Ordering Information 12 GND Ground Part Number Package 13 V Power Det. Ref. REF XP1050-QJ-0G00 bulk quantity 14 V Power Detector DET XP1050-QJ-0G0T tape and reel 15 RF RF Output OUT XP1050-QJ-EV1 evaluation module 16-17 N/C No Connection 18 V 2 Drain 2 Bias D 1. Reference Application Note M513 for reel size information. 2. All sample boards include 5 loose parts. 19-24 N/C No Connection 4 25 Pad Ground 3. It is recommended to connect unused pins to ground. 4. The exposed pad centered on the package bottom must be connected to RF and DC ground. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: XP1050-QJ 2.5 W Power Amplifier Rev. V1 7.1 - 8.5 GHz 5 Electrical Specifications: Freq: 7.1 - 8.5 GHz, V = 7 V, I = 1350 mA, T = +25C DD DQ A Parameter Units Min. Typ. Max. Gain 6 dBm P dB 13.5 15.5 18.5 IN Input Return Loss dB 10 Output Return Loss dB 8 P1dB dBm 33 6 Psat dBm 34 Output IP3 6 dBm P dBm 43.5 47 IN Delta V (V - V ) 6 dBm P 8.5 GHz V -0.88 DET DET REF IN, Detector Bias Voltage VDC 5 Gate Bias Voltage (V 1,2) VDC -0.7 GG 5. Adjust V 1 and V 2 between 1.4 and 0.4 V to achieve specified I . V 1 and V 2 should be the same voltage. GG GG DQ GG GG 6. For reference only. Large signal operation is only recommended under pulsed conditions. Keep output power below P1dB for C.W. operation. 7,8,9 11,12 Maximum Operating Ratings Absolute Maximum Ratings Parameter Absolute Max. Parameter Absolute Maximum Supply Gate Voltage -2.5 V Input Power +24 dBm Supply Current (I 1) 600 mA D Drain Supply Voltage +8 Volts Supply Current (I 2) 1200 mA D 10 Junction Temperature +160 C Detector Pin 6 V Operating Temperature -40C to +85C Detector Ref Pin 6 V Storage Temperature -65C to +150C Continuous Power 11.2 W Dissipation 85C 7. Exceeding any one or combination of these limits may cause permanent damage to this device. Junction Temperature 175C 8. M/A-COM Technology Solutions does not recommend sustained operation near these survivability limits. 11. Channel temperature directly affects a devices MTTF. 9. Operating at nominal conditions with T 160C will ensure Channel temperature should be kept as low as possible to J 6 MTTF > 1 x 10 hours. maximize lifetime. 10. Junction Temperature (T ) = T + * ((V * I) - (P - P )) 12. For saturated performance it recommended that the sum of J C JC OUT IN (2*V + abs(V )) <17 DD GG Typical thermal resistance ( ) = 6.8C/W JC a) For T = 25C, C T = 88C 7 V, 1350 mA, P = 21.5 dBm, P = 6 dBm J OUT IN b) For T = 85C, C Handling Procedures T =149C 7 V, 1350 mA, P = 20 dBm, P = 6 dBm J OUT IN Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these class 1A devices. 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: