XX1002-QH-EV1

XX1002-QH Active Doubler Rev. V4 2.5 - 6.0 / 5.0 - 12.0 GHz Functional Block Diagram Features Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5 V, 125 mA Bias Lead-Free 4 mm 24-lead QFN Package 100% RF, DC and Output Power Testing RoHS* Compliant and 260C Reflow Compatible Description The XX1002-QH is a 2.5 - 6.0 / 5.0 - 12.0 GHz QFN active doubler that delivers +16 dBm of output power. The device combines an active doubler with an output buffer amplifier that delivers constant power over a range of input powers. The device has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This device uses MACOM s GaAs HBT device technology to ensure high reliability and uniformity. 2 Pin Configuration The device comes in a low-cost 4 mm QFN surface mount plastic package offering excellent RF and thermal properties and is RoHS compliant. Pin No. Function Pin No. Function This device is specifically designed for point-to-point 3 RF In 22 V CC radio applications and is well suited for other 3 telecom applications such as SATCOM and VSAT. 16 RF Out 25 Paddle 2. MACOM recommends connecting unused package pins to ground. 1 3. The exposed paddle centered on the package bottom must be Ordering Information connected to RF and DC ground. Part Number Package XX1002-QH-0G0T tape and reel XX1002-QH-EV1 evaluation module 1. Reference Application Note M513 for reel size information. * Restrictions on Hazardous Substances, European Union Directive 2011/65/EU. 11 1 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: XX1002-QH Active Doubler Rev. V4 2.5 - 6.0 / 5.0 - 12.0 GHz Electrical Specifications: Input Freq. = 2.5 - 6.0 GHz (unless otherwise noted), T = 25C A Parameter Units Min. Typ. Max. Output Frequency Range GHz 5 - 12 Input Return Loss dB - -15 - Output Return Loss dB - -7 - Saturated Output Power dBm +13 +16 - RF Input Power dBm -3 - +3 Fundamental Leakage (Input Freq. = 2.5 - 4.25 GHz) dBc - -35 -23 Third Harmonic Leakage dBc - -30 - Fourth Harmonic Leakage dBc - -20 - Bias Voltage VDC - +5.0 +5.5 Supply Current (Quiescent) mA - 102 140 4,5 PCB Layout Absolute Maximum Ratings Parameter Absolute Max. Supply Voltage +6 V Supply Current 200 mA C2 Input Power +10 dBm C1 Storage Temperature -65C to +165C RF RF OFF IN Operating Temperature -55C to +85C 6,7 Junction Temperature +150C 4. Exceeding any one or combination of these limits may cause permanent damage to this device. 5. MACOM does not recommend sustained operation near these survivability limits. 6. Operating at nominal conditions with T +150C will ensure J 6 MTTF > 1 x 10 hours. 7. Junction Temperature (T ) = T + * (V * I) J C JC Typical CW thermal resistance ( ) = 77C/W JC Biasing Parts List The device is operated by biasing VCC = 5 V which Component Value Package will draw typically 102 mA quiescent / 125 mA un- der RF drive. The device requires by-passing as C1 1 nF 0402 shown in the recommended layout with C1 = 1 nF and C2 = 1 F. C2 1 F 0805 22 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macomtech.com for additional data sheets and product information. For further information and support please visit: