SP6669EB

SP6669 800mA 1.5MHz Synchronous Step Down Converter July 26, 2021 Rev. 5.0.0 GENERAL DESCRIPTION APPLICATIONS The SP6669 is a synchronous current mode Portable Equipment PWM step down (buck) converter capable of Battery Operated Equipment delivering up to 800mA of current. It features a pulse skip mode (PSM) for light load efficiency Audio-Video Equipment and a LDO mode for 100% duty cycle. Networking & Telecom Equipment With a 2.5V to 6.0V input voltage range and a 1.5MHz switching frequency, the SP6669 allows FEATURES the use of small surface mount inductors and capacitors ideal for battery powered portable Guaranteed 800mA Output Current applications. The internal synchronous switch Input Voltage: 2.5V to 6.0V increases efficiency and eliminates the need for 1.5MHz PWM Current Mode Control an external Schottky diode. Low output voltages are easily supported with the 0.6V 100% Duty Cycle LDO Mode Operations feedback reference voltage. Achieves 97% Efficiency Built-in over temperature and output over 0.6V 2% Accurate Reference voltage lock-out protections insure safe Excellent Line/Load Transient operations under abnormal operating Response conditions. 18A Quiescent Current The SP6669 is offered in a RoHS compliant, green/halogen free 5-pin SOT23 package. Over Temperature Protection RoHS Compliant Green/Halogen Free 5-Pin SOT23 Package TYPICAL APPLICATION DIAGRAM Fig. 1: SP6669 Application Diagram (Adj. version shown) 1 SP6669 800mA 1.5MHz Synchronous Step Down Converter ABSOLUTE MAXIMUM RATINGS OPERATING RATINGS These are stress ratings only and functional operation of Input Voltage Range VIN ............................... 2.5V to 6.0V the device at these ratings or any other above those Operating Temperature Range ................... -40C to 85C indicated in the operation sections of the specifications 1 Operating Junction Temperature ...........................125C below is not implied. Exposure to absolute maximum rating Thermal Resistance JA .................................. 134.5C/W conditions for extended periods of time may affect Thermal Resistance Jc ....................................... 81C/W reliability. Input Voltage V ....................................... -0.3V to 6.6V IN Enable VFB Voltage ....................................... -0.3V to VIN Note 1: TJ is a function of the ambient temperature TA and +0.3V) SW Voltage ...................................... -0.3V to (VIN power dissipation PD (TJ= TA + PD x JA). Peak Switch Sink/Source Current ............................ 1.3A Junction Temperature .......................................... 150C Storage Temperature .............................. -65C to 150C Lead Temperature (Soldering, 10 sec) ................... 260C ESD Rating (HBM - Human Body Model) .................... 2kV ESD Rating (CDM - Charged Device Model) ............... 500V ELECTRICAL SPECIFICATIONS Specifications with standard type are for an Operating Junction Temperature of T = 25C only limits applying over the full J Operating Junction Temperature range are denoted by a . Minimum and Maximum limits are guaranteed through test, design, or statistical correlation. Typical values represent the most likely parametric norm at TA = 25C, and are provided for = 3.6V. reference purposes only. Unless otherwise indicated, VIN Parameter Min. Typ. Max. Units Conditions Feedback Current IVFB 30 nA Regulated Feedback Voltage V 0.600 0.612 V FB 0.588 Reference Voltage Line 0.4 %/V V =2.5V to 5.5V IN Regulation V FB Output Over-Voltage Lockout 50 80 mV 20 VOVL = VOVL VFB (Adj.) V OVL Output Voltage Line Regulation 0.6 %/V VIN=2.5V to 5.5V V OUT Peak Inductor Current IPK 1.2 2.3 A VIN=3V, VFB=0.5V Output Voltage Load Regulation 0.5 % VLOADREG 1 Quiescent Current IQ 18 A VFB=0.65V Shutdown Current I 0.1 1 A V =0V, V =4.2V SHTDWN EN IN 1.5 1.8 MHz V =0.6V 1.2 FB Oscillator Frequency fOSC 750 kHz VFB=0V or VOUT=0V RDS(ON) of PMOS RPFET 0.24 ISW=100mA RDS(ON) of NMOS RNFET 0.24 ISW=100mA SW Leakage I 1 A V =0V, V =0V or 5V, V =5V LSW EN SW IN Enable Threshold V 1.2 V EN Shutdown Threshold VEN 0.4 V EN Leakage Current IEN 1 A Note 1: The dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency. 213DSR00 2 Rev. 5.0.0