SP691A/693A/800L/800M
Low Power Microprocessor Supervisory
with Battery Switch-Over
FEATURES
TOP VIEW
Precision 4.65V/4.40V Voltage Monitoring
VBATT 1 16
RESET
200ms Or Adjustable Reset Time
VOUT 2 15 RESET
100ms, 1.6s Or Adjustable Watchdog Time
Vcc 3 14 WDO
60A Maximum Operating Supply Current
GND 4 13
CEIN
2.0A Maximum Battery Backup Current
Corporation
BATT ON 5 12
CEOUT
0.1A Maximum Battery Standby Current
6
LOWLINE 11 WDI
Power Switching
7 10
OSCIN PFO
250mA Output in Vcc Mode (0.6)
OSCSEL 8 9 PFI
25mA Output in Battery Mode (5)
On-Board Gating of Chip-Enable Signals
DIP/SO
Memory Write-Cycle Completion
Now Available in Lead Free Packaging
6ns CE Gate Propagation Delay
Voltage Monitor for Power-Fail or Low Battery
Backup-Battery Monitor
RESET Valid to Vcc=1V
1% Accuracy Guaranteed (SP800L/800M)
Pin Compatible Upgrade to MAX691A/693A/
800L/800M
DESCRIPTION
The SP691A/693A/800L/800M is a microprocessor (P) supervisory circuit that integrates
a myriad of components involved in discrete solutions to monitor power-supply and
battery-control functions in P and digital systems. The SP691A/693A/800L/800M offers
complete P monitoring and watchdog functions. The SP691A/693A/800L/800M is ideal for
a low-cost battery management solution and is well suited for portable, battery-powered
applications with its supply current of 35A. The 6ns chip-enable propagation delay,
the 25mA current output in battery-backup mode, and the 250mA current output in
standard operation also makes the SP691A/693A/800L/800M suitable for larger scale,
high-performance equipment.
P a r t N u m b e r R E S E T T h r e s h o l d R E S E T A c c u r a c y P F I A c c u r a c y Ba c k u p -B a t t e r y S w i t c h
S P 6 9 1 A 4 . 6 5 V + 1 2 5 m V + 4 % YE S
S P 6 9 3 A 4 . 4 0 V + 1 2 5 m V + 4 % YE S
S P 8 0 0 L 4 . 6 5 V + 5 0 m V + 1 % YE S
S P 8 0 0 M 4 . 4 0 V + 5 0 m V + 1 % YE S
Date: 4/18/05 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over Copyright 2005 Sipex Corporation
1ABSOLUTE MAXIMUM RATINGS
These are stress ratings only and functional operation
Enhanced ESD Specifications........................+4kV Human Body Model
of the device at these ratings or any other above those
indicated in the operation sections of the specifications
Power Dissipation Per Package
O O
16-pin PDIP (derate 14.3mW/ C above +70 C).......................1150mW
below is not implied. Exposure to absolute maximum
O O
16-pin Narrow SOIC (derate 13.6mW/ C above 70 C)............1090mW
rating conditions for extended periods of time may
O O
16-pin Wide SOIC (derate 11.2mW/ C above 70 C).................900mW
affect reliability.
O O
Storage Temperature....................................................-65 C to +150 C
O
Terminal Voltages (with respect to GND) Lead Temperature (soldering,10 sec).........................................+300 C
V .......................................................................................-0.3V to +6V
CC
V .....................................................................................-0.3V to +6V
BATT
All Other Inputs........................................................-0.3V to (V +0.3V)
CC
Input Currents
V Peak...........................................................................................1.0A
CC
V Continuous.............................................................................250mA
CC
V Peak....................................................................................250mA
BATT
V Continuous............................................................................25mA
BATT
GND, BATT ON............................................................................100mA
All Other Inputs..............................................................................25mA
ELECTRICAL CHARACTERISTICS
V = +4.75V to +5.5V for the SP691A/800L, V = +4.5V to +5.5V for the SP693A/800M, V = +2.8V, and T = T to T unless otherwise
CC CC BATT AMB MIN MAX
O
noted. Typical values apply at T =+25 C.
AMB
P A R A M E T E R S M I N . T Y P . M A X . U N I T S CO N D I T I O N S
O p e r a t i n g V o l t a g e R a n g e ,
0 5 . 5 V
V o r V , N O T E 1
C C B A T T
O u t p u t V o l t a g e , V V -0 . 0 5 V -0 . 0 1 5 V =4.5V, I =25mA
OU T C C
C C CC OUT
in N o r m a l O p e r a t i n g M o d e V -0 . 3 V -0 . 1 5 V V =4.5V, I =250mA
C C
C C CC OUT
V -0 . 2 V -0 . 0 9 V =3.0V, V =2.8V, I =100mA
C C
C C CC BATT OUT
V -to-VOn-Resistance 0.6 1.2 V =4.5V
CC OUT CC
0.9 2.0 V =3.0V
CC
Vin Battery-Backup ModeV -0.3 V -0.1 V =4.5V, I =20mA
OUT BATT BATT BATT OUT
V -0.25 V -0.07 V =2.8V, I =10mA
BATT BATT V BATT OUT
V -0.15 V -0.05 V =2.0V, I =5mA
BATT BATT BATT OUT
V -to-VOn-Resistance 5 15 V =4.5V
BATT OUT BATT
7 25 V =2.8V
BATT
10 30 V =2.0V
BATT
Supply Current in Normal
35 60 A V >(V -1V), excluding I
CC BATT OUT
Operating Mode, I
Vcc
Supply Current in Battery-
A
0.001 2.0 V <(V -1.2V), V =2.8V, excluding I
CC BATT BATT OUT
Backup Mode, I , NOTE 2
BATT
V Standby Current, I ,
BATT BATT
-0.1 0.02 A V >(V +0.2V), excluding I
CC BATT OUT
NOTE 3
Battery Switchover ThresholdV +0.03 power-up
BATT
V
V -0.03 power-down
BATT
Battery Switchover Hysteresis 60 mV Peak to Peak
Date: 4/18/05 SP691A/693A/800L/800M Low Power Microprocessor Supervisor with Battery Switch-Over Copyright 2005 Sipex Corporation
2