XRP6668 1A/1A Dual Channel 1.5MHz Sync. Step Down Converter November 2017 Rev. 1.2.1 GENERAL DESCRIPTION APPLICATIONS The XRP6668 is a dual channel synchronous Portable Equipments current mode PWM step down (buck) Battery Operated Equipments converter capable of delivering up to 1 Amp of current per channel and optimized for portable Audio-Video Equipments battery-operated applications. Networking & Telecom Equipments Based on a current mode 1.5MHz constant frequency PWM control scheme, the XRP6668 FEATURES reduces the overall component count and solution footprint as well as provides a low Dual Channel Step Down Converter output voltage ripple and excellent line and Guaranteed 1A/1A Output Current load regulation. It also implements a PFM Input Voltage: 2.5V to 5.5V mode to improve light load efficiency as well as a 100% duty cycle LDO mode. Output 1.5MHz PWM Current Mode Control voltage is adjustable to as low as 0.6V with a PFM Mode Operations at Light Load better than 3% accuracy while a low quiescent 100% Duty Cycle LDO Mode Operations current supports the most stringent battery operating conditions. Adjustable Output Voltage Range Built-in over temperature and under voltage As Low as 0.6V with 3% Accuracy lock-out protections insure safe operations Internal Compensation Network under abnormal operating conditions. 30A Quiescent Current The XRP6668 is offered in a RoHS compliant, green/halogen free 8-pin exposed pad SOIC Over Temperature & UVLO Protections package. RoHS Compliant Green/Halogen Free 8-Pin Exposed Pad SOIC Package TYPICAL APPLICATION DIAGRAM Fig. 1: XRP6668 Application Diagram www.exar.com 1/11 XRP6668 1A/1A Dual Channel 1.5MHz Sync. Step Down Converter ABSOLUTE MAXIMUM RATINGS OPERATING RATINGS These are stress ratings only and functional operation of Input Voltage Range V ............................... 2.5V to 5.5V IN the device at these ratings or any other above those Junction Temperature Range .................... -40C to 125C indicated in the operation sections of the specifications Thermal Resistance ...................................................... below is not implied. Exposure to absolute maximum JA (8 Pin HSOIC) ........................................... 42C/W rating conditions for extended periods of time may affect (8 Pin HSOIC) ........................................... 10C/W JC reliability. Input Voltage VIN ...................................... -0.3V to 6.0V EN, VFB Voltages .......................................... -0.3V to VIN SW Voltage .................................... -0.3V to (V + 0.3V) IN Storage Temperature .............................. -65C to 150C Lead Temperature (Soldering, 10 sec) ................... 260C ESD Rating (HBM - Human Body Model) .................... 2kV ESD Rating (MM - Machine Model) ........................... 200V Junction Temperature (Notes 1, 3) ....................... 150C ELECTRICAL SPECIFICATIONS Specifications with standard type are for an Ambient Temperature of TA = 25C only limits applying over the full Operating Ambient Temperature range are denoted by a . Minimum and Maximum limits are guaranteed through test, design, or = 25C, and are provided for reference statistical correlation. Typical values represent the most likely parametric norm at TA purposes only. Unless otherwise indicated, V = 3.6V, T = 25C. IN A Parameter Min. Typ. Max. Units Conditions Input Voltage Range 2.5 5.5 V Feedback Current +100 nA Regulated Feedback Voltage 0.600 0.612 V 0.588 Output Voltage Accuracy +3 % I =100mA, V = 2.5V to 3.0V -3 OUT IN Output Voltage Accuracy -3 +3 % IOUT=100mA, VIN = 3.0V to 5.5V Reference Voltage Line Regulation 1 %/V VIN = 3V to 5.5V Output Voltage Line Regulation 1 %/V VIN = 3V to 5.5V Peak Inductor Current 2.3 A V = 0.5V or V = 90% 1.5 FB OUT PWM Quiescent Current (Note 2) 376 A V = 0.5V or V = 90%, dual channel FB OUT VFB = 0.65V or VOUT = 108%, dual 30 A PFM Quiescent Current channel Shutdown 0.1 1 A VRUN = 0V, VIN = 4.2V, dual channel Oscillator Frequency 1.2 1.5 1.8 MHz VFB = 0.6V or VOUT = 100% Short-Circuit Oscillator Frequency 900 kHz V = 0V or V = 0V FB OUT R of PMOS 0.24 I = 100mA DS(ON) SW 0.21 RDS(ON) of NMOS ISW = 100mA Under Voltage Lock Out 1.8 V SW Leakage +1 A VRUN = 0V, VSW = 0V or 5V, VIN = 5V Enable Threshold 1.2 V Shutdown Threshold V 0.4 RUN Leakage Current +1 A Note 1: TJ is a function of the ambient temperature TA and power dissipation PD: (TJ = TA + (PD * JA)) Note 2: Dynamic quiescent current is higher due to the gate charge being delivered at the switching frequency. Note 3: This IC has built-in over-temperature protection to avoid damage from overload conditions. Note 4: JA is measured in the natural convection at TA=25 on a high effective thermal conductivity test board (4 layers, 2S2P) of JEDEC 51-5 thermal measurement standard. represents the resistance to the heat flows the chip to package top case. Note 5: JC 2/11 Rev. 1.2.1