X-On Electronics has gained recognition as a prominent supplier of 1N3017B-1 Zener Diodes across the USA, India, Europe, Australia, and various other global locations. 1N3017B-1 Zener Diodes are a product manufactured by Microchip. We provide cost-effective solutions for Zener Diodes, ensuring timely deliveries around the world.

1N3017B-1 Microchip

1N3017B-1 electronic component of Microchip
1N3017B-1 Microchip
1N3017B-1 Zener Diodes
1N3017B-1  Semiconductors

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See Product Specifications
Part No. 1N3017B-1
Manufacturer: Microchip
Category: Zener Diodes
Description: Zener Diodes Voltage Regulator
Datasheet: 1N3017B-1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
116: USD 7.9844 ea
Line Total: USD 926.19 
Availability - 0
MOQ: 116  Multiples: 116
Pack Size: 116
Availability Price Quantity
0
Ship by Tue. 06 May to Thu. 08 May
MOQ : 116
Multiples : 116
116 : USD 7.9844

   
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We are delighted to provide the 1N3017B-1 from our Zener Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N3017B-1 and other electronic components in the Zener Diodes category and beyond.

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1N3016B-1 1N3045B-1 Qualified Levels: JAN, JANTX, and 1 Watt Glass Case Zener Diodes Available on JANTXV commercial Qualified per MIL-PRF-19500/115 versions DESCRIPTION This well established Zener diode series for the 1N3016B-1 through 1N3045B-1 JEDEC registration in the glass DO-41 package provides a glass hermetic seal for 6.8 to 110 volts. It is also well suited for high-reliability applications where it is available in JAN, JANTX, and JANTXV military qualifications. Lower voltages are also available in the 1N3821 through 1N3828 series (3.3 V to 7.5 V) in the same package (see separate data sheet). Important: For the latest information, visit our website 1N3016B-1 1N3045B-1 MECHANICAL and PACKAGING CASE: Hermetically sealed voidless hard glass with tungsten slugs. TERMINALS: Tin/lead or RoHS compliant matte/tin (commercial grade only) over copper. MARKING: Body coated in blue with part number. POLARITY: Cathode indicated by band. TAPE & REEL option: Standard per EIA-296. Consult factory for quantities. WEIGHT: 340 milligrams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N3016 B -1 e3 Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (available JANTX = JANTX level on commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant Blank = Commercial Metallurgically Bonded DO-41 JEDEC type number (See Electrical Characteristics table) Zener Voltage Tolerance B = 5% C = 2% D = 1% SYMBOLS & DEFINITIONS Symbol Definition I Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and temperature. R IZ, IZT, IZK Regulator Current: The dc regulator current (IZ), at a specified test point (IZT), near breakdown knee (IZK). I Maximum Regulator (Zener) Current: The maximum rated dc current for the specified power rating. ZM V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F V Reverse Voltage: The reverse voltage dc value, no alternating component. R V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region. Z Z Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a Z or Z ZT ZK specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively. ZT ZK ZT ZK T4-LDS-0285, Rev. 1 (4/22/13) 2013 Microsemi Corporation Page 2 of 5

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8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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