1N3154 - 1N3157A, e3 WWW.Microsemi .COM 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION DESCRIPTION APPEARANCE The popular 1N3154 thru 1N3157A series of Zero-TC Reference Diodes DO-7 provides a selection of 8.4 V nominal voltages and temperature coefficients to o (DO-204AA) as low as 0.001 %/ C for minimal voltage change with temperature when operated at 10.0 mA. These glass axial-leaded DO-7 reference diodes are also available in JAN, JANTX, and JANTXV military qualifications. As a further option for commercial product, they are available as RoHS Compliant with an e3 suffix added to the part number. Microsemi also offers numerous other Zener Reference Diode products for a variety of other voltages from 6.2 V to 200 V. IMPORTANT: For the most current data, consult MICROSEMIs website: 1N3154 - 1N3157A, e3 WWW.Microsemi .COM 1N3154 thru 1N3157, A, -1, e3 8.4 Volt Temperature Compensated Zener Reference Diodes SCOTTSDALE DIVISION o *ELECTRICAL CHARACTERISTICS 25 C, unless otherwise specified VOLTAGE MAXIMUM MAXIMUM ZENER ZENER TEMPERATURE EFFECTIVE JEDEC REVERSE ZENER VOLTAGE TEST STABILITY TEMPERATURE TEMPERATURE TYPE CURRENT IMPEDANCE (Note 3 & 4) COEFFICIENT V I CURRENT RANGE NUMBERS Z ZT (Note 2) I 5.5 V R (Note 1) I V (Notes 1, 5 ZT ZT VZ Z ZT MAXIMUM & 6) o o VOLTS mA OHMS A mV C %/ C 1N3154 8.00-8.80 10 15 10 130 -55 to +100 0.01 1N3154A 8.00-8.80 10 15 10 172 -55 to +150 0.01 1N3155 8.00-8.80 10 15 10 65 -55 to +100 0.005 1N3155A 8.00-8.80 10 15 10 86 -55 to +150 0.005 1N3156 8.00-8.80 10 15 10 26 -55 to +100 0.002 1N3156A 8.00-8.80 10 15 10 34 -55 to +150 0.002 1N3157 8.00-8.80 10 15 10 13 -55 to +100 0.001 1N3157A 8.00-8.80 10 15 10 17 -55 to +150 0.001 *JEDEC Registered Data. NOTES: 1. When ordering devices with tighter tolerance than specified, add a hyphenated suffix to the part number for desired tolerance, e.g. 1N3156-2%, 1N3157A-1%, 1N3157-1-1%, etc. o 2. Measured by superimposing 1.0 mA ac rms on 10 mA dc 25 C. 3. The maximum allowable change observed over the entire temperature range i.e., the diode voltage will not exceed the specified mV change at any discrete temperature between the established limits. 4. Voltage measurements to be performed 15 seconds after application of dc current. 5. The 1N3154, 1N3155, 1N3156, and 1N3157 also have military qualification to MIL-PRF-19500/158 up to the JANTXV level by adding JAN, JANTX, or JANTXV prefix to part numbers as well as -1 suffix, e.g. JANTX1N3156-1, JANTXV1N3157-1, etc. 6. Designate Radiation Hardened devices with RH prefix instead of IN, i.e. RH3157A instead of 1N3157A. GRAPHS The curve shown in Figure 1 is typical of the diode series and greatly simplifies the estimation of the Temperature Coefficient (TC) when the diode is operated at currents other than 10mA. EXAMPLE: A diode in this series is operated at a current of 10mA and has specified Temperature Coefficient (TC) limits of o +/-0.005%/ C. To obtain the typical Temperature Coefficient limits for this same diode operated at a current of 7.5mA, the o new TC limits (%/ C) can be estimated using the graph in FIGURE 1. At a test current of 7.5mA the change in Temperature Coefficient o (TC) is approximately 0.0012%. C. The algebraic sum of +/- o o 0.005% C and 0.0012%/ C gives the new estimated limits of +0.0038%/oC and -0.0062%/oC. I Operating Current (mA) Z FIGURE 1 TYPICAL CHANGE OF TEMPERATURE COEFFICIENT WITH CHANGE IN OPERATING CURRENT. Copyright 2005 Microsemi Page 2 7-18-2005 REV B Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503 o Change in temperature coefficient (%/ C) o Change in temperature coefficient (mV/ C)