X-On Electronics has gained recognition as a prominent supplier of 1N4608 diodes - general purpose, power, switching across the USA, India, Europe, Australia, and various other global locations. 1N4608 diodes - general purpose, power, switching are a product manufactured by Microchip. We provide cost-effective solutions for diodes - general purpose, power, switching, ensuring timely deliveries around the world.

1N4608 Microchip

1N4608 electronic component of Microchip
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Part No.1N4608
Manufacturer: Microchip
Category:Diodes - General Purpose, Power, Switching
Description: Diodes - General Purpose, Power, Switching Signal or Computer Diode
Datasheet: 1N4608 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 3.1395 ea
Line Total: USD 3.14

Availability - 225
Ships to you between
Thu. 13 Jun to Mon. 17 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
225 - WHS 1


Ships to you between Thu. 13 Jun to Mon. 17 Jun

MOQ : 1
Multiples : 1
1 : USD 3.1395
100 : USD 3.1395

     
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We are delighted to provide the 1N4608 from our Diodes - General Purpose, Power, Switching category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 1N4608 and other electronic components in the Diodes - General Purpose, Power, Switching category and beyond.

Silicon Switching Diode DO-35 Glass Package 1N4607 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lea d Dia . 0 .0 18-0 .0 22 Six sigma quality 0 .458-0.558 mm Metallurgically bonded BKC s Sigma Bond plating 1.0 Dia. for problem free solderability Length 25.4 mm 0.06-0.09 0.120-.200 3.05-5.08-mm (Min.) 1.53-2.28 mm Maximum Ratings Symbol Value Unit o Peak Inverse Voltage 5A & 0.1A -55 C PIV 85 (Min). Volts Average Rectified Current Iavg 200 mAmps Continuous Forward Current I 200 mAmps Fdc Peak Surge Current (t = 1 sec.) I 1.0 Amp peak peak o BKC Power Dissipation T =50 C, L = 3/8 from body P 500 mWatts L tot o Operating Temperature Range T -65 to +200 C Op o Storage Temperature Range T -65 to +200 C St o Electrical Characteristics 25 C* Symbol Minimum Maximum Unit Forward Voltage Drop I = 400 mA V *** 1.10 Volts F F Breakdown Voltage I = 25 A PIV 85 Volts R Reverse Leakage Current V = 50 V I 100 A R R Reverse Recovery time (note 1) t 10 nSecs rr Note 1: Per Method 4031-A with I = 10 mA,Vr = 6 V, R = 100 Ohms. * UNLESS OTHERWISE SPECIFIED F L 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 Silicon Switching Diode DO-35 Glass Package 1N4608 1N4150 Applications Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features Lea d Dia . 0 .0 18-0 .0 22 Six sigma quality 0 .458-0.558 mm Metallurgically bonded BKC s Sigma Bond plating 1.0 Dia. for problem free solderability Length 0.06-0.09 25.4 mm 0.120-.200 3.05-5.08-mm (Min.) 1.53-2.28 mm Maximum Ratings Symbol Value Unit o Peak Inverse Voltage 5A & 0.1A -55 C PIV 85 (Min). Volts Average Rectified Current Iavg 200 mAmps Continuous Forward Current I 500 mAmps Fdc Peak Surge Current (t = 1 sec.) I 1.0 Amp peak peak o BKC Power Dissipation T =50 C, L = 3/8 from body P 500 mWatts L tot o Operating Temperature Range T -65 to +150 C Op o Storage Temperature Range T -65 to +150 C St o Electrical Characteristics 25 C* Symbol Minimum Maximum Unit Forward Voltage Drop I = 400 mA V *** 1.10 Volts F F Breakdown Voltage I = 25 A PIV 85 Volts R Reverse Leakage Current V = 50 V I 100 A R R Reverse Recovery time (note 1) t 10 nSecs rr Note 1: Per Method 4031-A with I = 10 mA,Vr = 6 V, R = 100 Ohms. * UNLESS OTHERWISE SPECIFIED F L 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
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Microsemi Corporation
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Silicon Storage
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SILICON STORAGE TECHNOLOGY
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VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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