The Microchip 1N5806 is a 3-amp, 600-volt Power MOSFET. It is a low RDS(on) MOSFET with low gate charge and low internal capacitances, designed for switching applications and designed for low voltage, high-current applications up to 350 volts. It features a wide Vds range, making it an ideal choice for high-voltage and high-current applications. It is housed in an 8-pin DIP package and is RoHS compliant. It offers an average on-state resistance of 0.50 ohms and a breakdown voltage of 600 volts.