Product Information

1N6045A

1N6045A electronic component of Microchip

Datasheet
TVS Diodes - Transient Voltage Suppressors Transient Voltage Suppressor

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

25: USD 28.8681 ea
Line Total: USD 721.7

0 - Global Stock
MOQ: 25  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 25
Multiples : 1

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1N6045A
Microchip

25 : USD 28.8681
250 : USD 27.1591

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

1N6045A
Microchip

1 : USD 38.4905
100 : USD 38.433

     
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RoHS - XON
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1N6036(A) thru 1N6072(A) Qualified Levels: 1500 WATT BIDIRECTIONAL JAN, JANTX, and Available on TRANSIENT VOLTAGE SUPPESSOR JANTXV commercial versions Qualified per MIL-PRF-19500/507 DESCRIPTION This popular Transient Voltage Suppressor (TVS) series for 1N6036 thru 1N6072A are JEDEC registered selections for bidirectional devices. All have the same high Peak Pulse Power rating of 1500 W with extremely fast response times. They are also available in military qualified selections as described in the Features section herein. They are most often used for protecting against transients from inductive switching environments, induced RF effects, or induced secondary lightning effects as found in lower surge levels of IEC61000-4-5. They are also very successful in protecting airborne avionics and electrical systems. Since their response time is virtually instantaneous, they can also protect from ESD and EFT per IEC61000-4-2 and IEC61000-4-4. Important: For the latest information, visit our website 1N6036(A) thru 1N6072(A) MAXIMUM RATINGS Parameters/Test Conditions Symbol Value Unit Junction and Storage Temperature T and T -55 to +175 C J STG (1) Peak Pulse Power T = +25 C P 1500 W L PP (2) Rated Average Power Dissipation T +125 C P 1 W L M(AV) o Solder Temperature 10 s T 260 C SP Notes: 1. At 10/1000 us with repetition rate of 0.01% or less (see Figures 1, 2, & 4). 2. At 10 mm from body (see derating in Figure 3 and note below). MECHANICAL and PACKAGING CASE: DO-13 (DO-202AA), welded, hermetically sealed metal and glass. TERMINALS: All external metal surfaces are tin-lead plated and solderable per MIL-STD-750 method 2026. MARKING: Part number. POLARITY: Not applicable for bidirectional TVS. TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities. WEIGHT: Approx 1.4 grams. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6036 A (e3) Reliability Level RoHS Compliance JAN = JAN level e3 = RoHS compliant (available JANTX = JANTX level on commercial grade only) JANTXV = JANTXV level Blank = non-RoHS compliant (All of the above require A suffix) Blank = Commercial Voltage Tolerance A = 5% JEDEC type number Blank = 10% (See Electrical Characteristics table) SYMBOLS & DEFINITIONS Symbol Definition V Standoff Voltage: Applied Reverse Voltage to assure a nonconductive condition. WM o V Breakdown Voltage: This is the Breakdown Voltage the device will exhibit at 25 C. (BR) Maximum Clamping Voltage: The maximum peak voltage appearing across the TVS when subjected to the peak pulse current in a one millisecond time interval. The peak pulse voltage is the combination of voltage rise due to both the V C series resistance and thermal rise and positive temperature coefficient ( ). V(BR) I Peak Pulse Current: The peak current during the impulse. (See Figure 2) PP P Peak Pulse Power: The pulse power as determined by the product of V and I . PP C PP I Standby Current: The current at the standoff voltage (V ). D WM I Breakdown Current: The current used for measuring Breakdown Voltage (V ). (BR) (BR) T4-LDS-0097, Rev. 3 (120714) 2012 Microsemi Corporation Page 2 of 7

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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