Product Information

1N6639US

1N6639US electronic component of Microchip

Datasheet
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

106: USD 6.7155 ea
Line Total: USD 711.84

0 - Global Stock
MOQ: 106  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 106
Multiples : 1

Stock Image

1N6639US
Microchip

106 : USD 6.7155
1060 : USD 6.4429
10600 : USD 6.3141

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

1N6639US
Microchip

1 : USD 8.947
100 : USD 8.9355

Read More Specifications

     
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Product Category
RoHS - XON
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Product
Mounting Style
Package / Case
Packaging
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Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
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Additional Infomation About Product

1N6639US 1N6639US THRU 1N6641US AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGICALLY BONDED MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C Operating Current: 300 mA Derating: 4.6 mA/C Above T = + 110C EC Surge Current: I = 2.5A, P = 8.3ms FSM w MILLIMETERS INCHES DIM MIN MAX MIN MAX D 1.78 2.16 0.070 0.085 ELECTRICAL CHARACTERISTICS 25C, unless otherwise specied. F 0.48 0.71 0.019 0.028 G 4.19 4.95 0.165 0.195 S 0.08MIN. 0.003MIN. V V I I T T C BRR RWM R1 R2 FR RR T TYPES 10 A T = +25C T = +150C I I = 10 mA V = 0 A A F R R V=V = I = 10 mA R R = 200 mA F V V R = 100 RWM RWM L FIGURE 1 V V nA dc A dc ns ns pF (pk) (pk) 1N6639US 100 75 100 100 10 4.0 2.5 1N6640US 75 50 100 100 10 4.0 2.5 DESIGN DATA 1N6641US 75 50 100 100 10 5.0 3.0 CASE: D-5D, Hermetically sealed glass case, per MIL-PRF- 19500/609 FORWARD VOLTAGE: LEAD FINISH: Tin / Lead V I F F TYPES VdC mA THERMAL RESISTANCE: (R ): OJEC MIN MAX (PULSED) 50 C/W maximum at L = 0 1N6639US 1.20 500 THERMAL IMPEDANCE: (Z ): 25 0.54 0.62 1 OJX C/W maximum 1N6640US 0.76 0.86 50 0.82 0.92 100 0.87 1.00 200 POLARITY: Cathode end is banded 1N6641US 1.10 200 MOUNTING SURFACE SELECTION: The Axial Coefficient of Expansion (COE) of this device is approximately + 4PPM / C. The COE of the Mounting Surface System should be selected to provide a suitable match with this device. 6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841 PHONE (978) 620-2600 FAX (781) 689-0803 WEBSITE: IN6639US thru IN6641US 1000 100 10 1 0.1 .2 .3 .4 .5 .6 .7 .8 .9 1.0 1.1 1.2 VF - Forward Voltage (V) FIGURE 2 Typical Forward Current vs Forward Voltage 1000 100 10 1 0.1 .01 NOTE : All temperatures shown on graphs are junction temperatures .001 20 40 60 80 100 120 140 Percent of Reverse Working Voltage (%) FIGURE 3 Typical Reverse Current vs Reverse Voltage 160 150C -65C 100C 25C 150C 100C 25C -65C I - Forward Current - (mA) F I - Reverse Current - (A) R

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

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Microsemi Commercial Components Group
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Microsemi FTD
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Vitesse / Microsemi

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