Product Information

1N6643US

1N6643US electronic component of Microchip

Datasheet
Diodes - General Purpose, Power, Switching Signal or Computer Diode
Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.5707 ea
Line Total: USD 8.57

110 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
104 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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1N6643US
Microchip

1 : USD 7.5818
100 : USD 7.5699

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Additional Infomation About Product

1N6638US, 1N6642US, 1N6643US Qualified Levels: VOIDLESS HERMETICALLY SEALED JAN, JANTX, Available on SWITCHING DIODES JANTXV and JANS commercial versions Qualified per MIL-PRF-19500/578 DESCRIPTION This popular surface mount equivalent JEDEC registered switching/signal diodes are military qualified and available with internal metallurgical bonded construction. These small low capacitance diodes with very fast switching speeds are hermetically sealed and bonded into a D-5D package. They may be used in a variety of fast switching applications including computers and peripheral equipment such as magnetic cores, thin-film memories, plated-wire memories, as well as decoding or encoding applications, etc. Microsemi also offers a variety of other switching/signal diodes. Important: For the latest information, visit our website 1N6638US, 1N6642US, 1N6643US MECHANICAL and PACKAGING CASE: Voidless hermetically sealed hard glass. TERMINALS: Tin-Lead plate with >3% Lead. Solder dip is available upon request. MARKING: Body painted and alpha numeric. POLARITY: Cathode indicated by band. Tape & Reel option: Standard per EIA-481-1-A with 12 mm tape. Consult factory for quantities. See Package Dimensions on last page. PART NOMENCLATURE JAN 1N6638 US (e3) Reliability Level RoHS Compliance JAN = JAN Level e3 = RoHS compliant (available JANTX = JANTX Level on commercial grade only) JANTXV = JANTXV Level Blank = non-RoHS compliant JANS = JANS Level Blank = commercial Surface Mount Package JEDEC type number See Electrical Characteristics table SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current. BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating temperature V RWM range. V Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current. F Maximum Reverse Current: The maximum reverse (leakage) current that will flow at the specified voltage and I R temperature. C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage. Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from t the forward direction to the reverse direction and a specified recovery decay point after a peak reverse current is rr reached. o ELECTRICAL CHARACTERISTICS 25 C unless otherwise noted. MAXIMUM MAXIMUM DC REVERSE CURRENT REVERSE MAXIMUM MAXIMUM FORWARD RECOVERY FORWARD JUNCTION VOLTAGE TIME RECOVERY CAPACITANCE V I t VOLTAGE AND f = 1 MHz F F rr TYPE (Note 1) TIME Vsig = 50 mV NUMBER I I I I I =200mA, t =1ns (p-p) R1 R2 R3 R4 F r V = V =V V =20 V V =V R R RWM R R RWM 20 V T = T = t V =0 V V =1.5 V V A A FRM fr R R o o +150 C +150 C V mA V mA nA nA ns A A V ns pf pf 1N6638US 0.8 V 10 mA 1.1 V 200 mA 35 500 50 100 4.5 5.0 20 2.5 2.0 1N6642US 0.8 V 10 mA 1.2 V 100 mA 25 500 50 100 5.0 5.0 20 5.0 2.8 1N6643US 0.8 V 10 mA 1.2 V 100 mA 50 500 75 100 6.0 5.0 20 5.0 2.8 NOTE: 1. Reverse Recovery Time Test Conditions I =I =10 mA, I = 1.0 mA, C=3 pF, R = 100 ohms. F R R(REC) L T4-LDS-0218-1, Rev. 2 (11/07/14)(111513) 2014 Microsemi Corporation Page 2 of 5

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Microchip may also be referenced as

AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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