1N935B-1 1N938B-1
Qualified Levels:
Temperature Compensated
JAN, JANTX,
Available on
Zener Reference Diodes
JANTXV and JANS
commercial
versions
Qualified per MIL-PRF-19500/156
DESCRIPTION
The popular 1N935B-1 through 1N938B-1 series of Zero-TC (Temperature Compensated)
reference diodes provides a selection of 9.0 V nominal voltages and temperature coefficients
o
to as low as 0.001 %/ C for minimal voltage change with temperature when operated at 7.5
mA. These glass axial-leaded DO-35 reference diodes are also available in JAN, JANTX,
JANTXV and JANS military qualifications. For commercial applications it is also available as
RoHS compliant.
Important: For the latest information, visit our website 1N935B-1 1N938B-1
MECHANICAL and PACKAGING
CASE: Hermetically sealed glass case. DO-35 (DO-204AH) package.
TERMINALS: Tin-lead or RoHS compliant annealed matte-tin plating (commercial grade only) over copper clad steel. Solderable
per MIL-STD-750, method 2026.
MARKING: Part number and cathode band.
POLARITY: Reference diode to be operated with the banded (cathode) end positive with respect to the opposite end.
TAPE & REEL option: Standard per EIA-296 (add TR suffix to part number). Consult factory for quantities.
WEIGHT: Approximately 0.2 grams.
See package dimensions on last page.
PART NOMENCLATURE
JAN 1N935 B -1 e3
Reliability Level* RoHS Compliance
JAN = JAN Level e3 = RoHS compliant (available
JANTX = JANTX Level on commercial grade only)
JANTXV = JANTXV Level Blank = non-RoHS compliant
JANS = JANS Level
* (available on B suffix only) Metallurgical Bond
Blank = Commercial
Temperature Range
JEDEC type number
Blank = 0 to +75 C
(see Electrical Characteristics
A = -55 to +100 C
table)
B = -55 to +150 C (required for
JAN level)
SYMBOLS & DEFINITIONS
Symbol Definition
I Maximum Zener Current: The maximum rated dc current for the specified power rating.
ZM
I , I , I Regulator Current: The dc regulator current (I ), at a specified test point (I ), near breakdown knee (I ).
Z ZT ZK Z ZT ZK
V Zener Voltage: The Zener voltage the device will exhibit at a specified current (I ) in its breakdown region.
Z Z
Dynamic Impedance: The small signal impedance of the diode when biased to operate in its breakdown region at a
Z or Z
ZT ZK
specified rms current modulation (typically 10% of I or I ) and superimposed on I or I respectively.
ZT ZK ZT ZK
T4-LDS-0155, Rev. 2 (121998) 2013 Microsemi Corporation Page 2 of 6