24C01C-EP Microchip

24C01C 2 1K 5.0V I C Serial EEPROM Features: Description: Single Supply with Operation from 4.5V to 5.5V The Microchip Technology Inc. 24C01C is a 1K bit Serial Electrically Erasable PROM with a voltage range Low-Power CMOS Technology: of 4.5V to 5.5V. The device is organized as a single - Read current 1 mA, max. block of 128x8-bit memory with a 2-wire serial - Standby current 5 A, max. interface. Low-current design permits operation with 2 2-Wire Serial Interface, I C Compatible max. standby and active currents of only 5 A and 1 Cascadable up to Eight Devices mA, respectively. The device has a page write capabil- Schmitt Trigger Inputs for Noise Suppression ity for up to 16 bytes of data and has fast write cycle times of only 1 ms for both byte and page writes. Func- Output Slope Control to Eliminate Ground Bounce tional address lines allow the connection of up to eight 100 kHz and 400 kHz Clock Compatibility 24C01C devices on the same bus for up to 8K bits of Page Write Time 1 ms max. contiguous EEPROM memory. The device is available Self-Timed Erase/Write Cycle in the standard 8-pin PDIP, 8-pin SOIC (3.90 mm), 16-Byte Page Write Buffer 8-pin 2x3 DFN and TDFN, 8-pin MSOP and TSSOP packages. The 24C01C is also available in the 6-lead ESD Protection >4000V SOT-23 package. More than 1 Million Erase/Write Cycles Data Retention >200 Years Block Diagram Factory Programming Available Packages include 8-lead PDIP, SOIC, TSSOP, A0 A1 A2 DFN, TDFN, MSOP and 6-lead SOT-23 HV Generator Pb-Free and RoHS Compliant Temperature Ranges: I/O Memory Control - Industrial (I): -40 C to +85C Control EEPROM Logic Logic XDEC - Automotive (E): -40 C to +125 C Array SDA SCL VCC YDEC VSS Sense Amp. R/W Control Package Types PDIP, MSOP SOIC, TSSOP DFN/TDFN SOT-23 SCL VCC 1 6 A0 1 VCC A0 1 8 VCC 8 1 8 A0 VCC 7 Test A1 2 VSS 2 A0 5 A1 2 7 Test A1 2 7 Test 6 SCL A2 3 A2 3 6 SCL VSS 4 5 SDA 3 4 3 6 SDA A1 A2 SCL VSS 4 5 SDA VSS 4 5 SDA 1997-2012 Microchip Technology Inc. DS21201K-page 124C01C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS Industrial (I): VCC = +4.5V to 5.5V TA = -40C to +85C Automotive (E): VCC = +4.5V to 5.5V TA = -40C to +125C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, A2, SCL, SDA and WP pins: D2 VIH High-level input voltage 0.7 VCC V D3 VIL Low-level input voltage 0.3 VCC V D4 VHYS Hysteresis of Schmitt CC V (Note) 0.05 V Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 4.5V D6 ILI Input leakage current 1 A VIN = VSS or VCC, WP = VSS D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 5.0V (Note) COUT (all inputs/outputs) TA = 25C, f = 1 MHz D9 ICC Read Operating current 1 mA VCC = 5.5V, SCL = 400 kHz ICC Write 3 mA VCC = 5.5V D10 ICCS Standby current 5 AVCC = 5.5V, SDA = SCL = VCC WP = VSS Note: This parameter is periodically sampled and not 100% tested. DS21201K-page 2 1997-2012 Microchip Technology Inc.