Product Information

24FC1026-I/P

24FC1026-I/P electronic component of Microchip

Datasheet
Memory; EEPROM; I2C; 128kx8bit; 1.8÷5.5V; 1MHz; DIP8

Manufacturer: Microchip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.5195 ea
Line Total: USD 4.52

80 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
80 - WHS 1


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1

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24FC1026-I/P
Microchip

1 : USD 4.5195
25 : USD 4.5195
120 : USD 4.347

174 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 2
Multiples : 1

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24FC1026-I/P
Microchip

2 : USD 4.497

     
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24AA1026/24LC1026/24FC1026 2 1024K I C CMOS Serial EEPROM Functional address lines allow up to four devices on the Device Selection Table: same data bus. This allows for up to 4 Mbits total Part VCC Max. Clock Temp. system EEPROM memory. This device is available in Number Range Frequency Ranges the standard 8-pin PDIP, SOIC and SOIJ packages. 24AA1026 1.7-5.5V 400 kHz I Package Type 24LC1026 2.5-5.5V 400 kHz I 24FC1026 1.8-5.5V 1 MHz I PDIP NC 1 8 VCC 100 kHz for VCC < 2.5V 400 kHz for VCC < 2.5V A1 2 7 WP A2 3 6 SCL Features: VSS 4 5 SDA Low-Power CMOS Technology: - Read current 450 A, maximum SOIJ/SOIC - Standby current 5 A, maximum 1 8 2 NC VCC 2-Wire Serial Interface, I C Compatible 2 7 Cascadable up to Four Devices A1 WP Schmitt Trigger Inputs for Noise Suppression 3 6 A2 SCL Output Slope Control to Eliminate Ground Bounce 4 5 VSS SDA 100 kHz and 400 kHz Clock Compatibility 1 MHz Clock for FC Versions Page Write Time 3 ms, typical Block Diagram Self-Timed Erase/Write Cycle 128-Byte Page Write Buffer A1 A2 WP HV Generator Hardware Write-Protect ESD Protection >400V More than 1 Million Erase/Write Cycles I/O Memory EEPROM Control Control XDEC Data Retention >200 Years Array Logic Logic Factory Programming Available Page Latches Packages include 8-lead PDIP, SOIJ and SOIC I/O Pb-Free and RoHS Compliant SCL YDEC Temperature Ranges: SDA - Industrial (I): -40 C to +85C VCC Description: Sense AMP VSS R/W Control The Microchip Technology Inc. 24AA1026/24LC1026/ 24FC1026 (24XX1026*) is a 128K x 8 (1024K bit) Serial Electrically Erasable PROM, capable of *24XX1026 is used in this document as a generic part number operation across a broad voltage range (1.7V to 5.5V). for the 24AA1026/24LC1026/24FC1026 devices. It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device has both byte write and page write capability of up to 128 bytes of data. This device is capable of both random and sequential reads. Reads may be sequential within address boundaries 0000h to FFFFh and 10000h to 1FFFFh. 2011 Microchip Technology Inc. DS22270A-page 124AA1026/24LC1026/24FC1026 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS .......................................................................................................... -0.6V to VCC+1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied..................................................................................................-40C to +85C ESD protection on all pins 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS DC CHARACTERISTICS Industrial (I): VCC = +1.7V to 5.5V TA = -40C to +85C Param. Sym. Characteristic Min. Max. Units Conditions No. A1, A2, SCL, SDA and WP pins: D1 VIH High-level input voltage 0.7 VCC V D2 VIL Low-level input voltage 0.3 VCC V VCC 2.5V 0.2 VCC V VCC < 2.5V D3 VHYS Hysteresis of Schmitt 0.05 VCC VVCC 2.5V (Note) Trigger inputs (SDA, SCL pins) D4 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 4.5V IOL = 2.1 mA VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC VIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance 10 pFVCC = 5.0V (Note) COUT (all inputs/outputs) TA = 25C, FCLK = 1 MHz D8 ICC Read Operating current 450 AVCC = 5.5V, SCL = 400 kHz ICC Write 5 mA VCC = 5.5V D9 ICCS Standby current 5 A SCL, SDA, VCC = 5.5V A1, A2, WP = VSS Note: This parameter is periodically sampled and not 100% tested. DS22270A-page 2 2011 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
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Microchip / Microsemi
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Microsemi Analog Mixed Signal Group
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SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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