Product Information

24LC014T-I/MNY

24LC014T-I/MNY electronic component of Microchip

Datasheet
EEPROM 1K 128 X 8 SERIAL EE 2.5V IND

Manufacturer: Microchip
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Price (USD)

3300: USD 0.324 ea
Line Total: USD 1069.2

0 - Global Stock
MOQ: 3300  Multiples: 3300
Pack Size: 3300
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3300
Multiples : 3300

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24LC014T-I/MNY
Microchip

3300 : USD 0.4723

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 3300
Multiples : 3300

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24LC014T-I/MNY
Microchip

3300 : USD 0.4082

     
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24AA014/24LC014 2 1K I C Serial EEPROM Device Selection Table Description: Part VCC Max Temp. The Microchip Technology Inc. 24AA014/24LC014 is a Number Range Clock Range 1 Kbit Serial Electrically Erasable PROM with opera- tion down to 1.7V. The device is organized as a single (1) I 24AA014 1.7V - 5.5V 400 kHz block of 128 x 8-bit memory with a 2-wire serial inter- face. Low-current design permits operation with typical 24LC014 2.5V - 5.5V 400 kHz I, E standby and active currents of only 1 A and 1 mA, Note 1: 100 kHz for VCC < 2.5V respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow the connection of up to eight 24AA014/24LC014 Features: devices on the same bus for up to 8 Kbits of contiguous Single-Supply with Operation down to 1.7V EEPROM memory. The device is available in the Low-Power CMOS Technology: standard 8-pin PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 DFN and TDFN and MSOP packages. The 24AA014/ - 1 mA active current, typical 24LC014 is also available in the 6-lead SOT-23 -1 A standby current, typical at 5.5V package. Organized as a Single Block of 128 Bytes (128 x 8) Package Types Hardware Write Protection for Entire Array PDIP/SOIC/TSSOP/MSOP DFN/TDFN 2 2-Wire Serial Interface Bus, I C Compatible 1 A0 8 VCC 100 kHz and 400 kHz Clock Compatibility A0 1 8 VCC WP A1 2 7 Page Write Buffer for up to 16 Bytes A1 2 7 WP 6 SCL A2 3 Self-Timed Write Cycle (including auto-erase) VSS 4 5 A2 3 6 SCL SDA 5 ms max. Write Cycle Time VSS 4 5 SDA Address Lines allow up to Eight Devices on Bus 1,000,000 Erase/Write Cycles SOT-23 ESD Protection > 4,000V VCC SCL 1 6 Data Retention > 200 Years 8-Lead PDIP, SOIC, TSSOP, DFN, TDFN and VSS A0 2 5 MSOP Packages 3 4 SDA A1 6-Lead SOT-23 Package Pb-Free and RoHS Compliant Available for Extended Temperature Ranges: Block Diagram - Industrial (I): -40C to +85C WP A0 A1 A2 - Automotive (E) -40C to +125C HV Generator I/O Memory Control Control EEPROM Logic XDEC Logic Array SDA SCL Write-Protect Circuitry VCC YDEC VSS Sense Amp. R/W Control 2010 Microchip Technology Inc. DS21809G-page 124AA014/24LC014 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC SPECIFICATIONS Industrial (I): TA = -40C to +85C, VCC = +1.7V to +5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C, VCC = +2.5V to +5.5V Param. Symbol Characteristic Min. Typ. Max. Units Conditions No. A0, A1, A2, SCL, SDA and WP pins D1 VIH High-level input voltage 0.7 VCC V D2 VIL Low-level input voltage 0.3 VCC V0.2 VCC for VCC < 2.5V D3 VHYS Hysteresis of Schmitt 0.05 VCC V (Note) Trigger inputs D4 VOL Low-level output voltage 0.40 V IOL = 3.0 mA, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS or VCC D6 ILO Output leakage current 1 AVOUT = VSS or VCC D7 CIN, Pin capacitance 10 pFVCC = 5.5V (Note) COUT (all inputs/outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Operating current 0.1 3 mA VCC = 5.5V, SCL = 400 kHz D9 ICC read 0.05 1 mA D10 ICCS Standby current 0.01 1 A Industrial 5 A Automotive SDA = SCL = VCC A0, A1, A2, WP = VSS Note: This parameter is periodically sampled and not 100% tested. DS21809G-page 2 2010 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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