Product Information

24VL014T/MNY

24VL014T/MNY electronic component of Microchip

Datasheet
Microchip Technology EEPROM 1K 128 X 8 SERIAL EE 1.5V

Manufacturer: Microchip
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Price (USD)

1: USD 0.6313 ea
Line Total: USD 0.63

4320 - Global Stock
Ships to you between
Mon. 27 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3008 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 1
Multiples : 1

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24VL014T/MNY
Microchip

1 : USD 0.7477
10 : USD 0.7359
25 : USD 0.724
100 : USD 0.712
250 : USD 0.7002
500 : USD 0.6861
1000 : USD 0.6861
3000 : USD 0.6861

4320 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

24VL014T/MNY
Microchip

1 : USD 0.6313
10 : USD 0.6279
25 : USD 0.6279
100 : USD 0.6279
3300 : USD 0.6279

     
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24VL014 2 1K I C Serial EEPROM Device Selection Table Description: Part Number VCC Range Max Clock The Microchip Technology Inc. 24VL014 is a 1 Kbit Serial Electrically Erasable PROM with operation (1) 24VL014 1.5 to 3.6V 400 kHz down to 1.5V. The device is organized as a single block of 128 x 8-bit memory with a 2-wire serial interface. Note 1: 100 kHz for VCC < 1.8V Low-current design permits operation with maximum standby and active currents of only 1 A and 400 A, Features: respectively. The device has a page write capability for up to 16 bytes of data. Functional address lines allow Single-Supply with Operation down to 1.5V the connection of up to eight 24VL014 devices on the Low-Power CMOS Technology: same bus for up to 8 Kbits of contiguous EEPROM - 400 A active current, maximum memory. The device is available in the standard 8-pin -1 A standby current, maximum PDIP, 8-pin SOIC (150 mil), TSSOP, 2x3 TDFN and 2 2-Wire Serial Interface Bus, I C Compatible MSOP packages. The 24VL014 is also available in the 6-lead SOT-23 package. Schmitt Trigger Inputs for Noise Suppression Output Slope Control to Eliminate Ground Bounce Block Diagram 100 kHz and 400 kHz Compatibility Page Write Buffer for up to 16 Bytes WP A0 A1 A2 HV Generator Self-Timed Write Cycle (including Auto-Erase) Hardware Write Protection for the Entire Array I/O Memory (00h-7Fh) Control Control EEPROM Logic Cascadable up to Eight Devices XDEC Logic Array More than 1 Million Erase/Write Cycles ESD Protection > 4,000V SDA SCL Data Retention > 200 Years Write-Protect Factory Programming (QTP) Available Circuitry VCC 8-pin PDIP, SOIC, TSSOP, TDFN and MSOP YDEC VSS Packages Sense Amp. 6-lead SOT-23 package R/W Control Temperature Range: - -20C to +85C Pb-Free and RoHS Compliant Package Types PDIP, MSOP SOIC, TSSOP A0 1 8 VCC 1 8 A0 VCC A1 2 7 WP 2 7 A1 WP A2 3 6 SCL A2 3 6 SCL VSS 4 5 SDA 4 5 VSS SDA TDFN SOT-23 A0 1 8 VCC SCL 1 6 VCC 7 WP A1 2 VSS 2 5 A0 SCL 6 A2 3 A1 SDA 3 4 VSS 5 4 SDA 2009 Microchip Technology Inc. DS22129A-page 124VL014 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied..................................................................................................-20C to +85C ESD protection on all pins .................................................................................................................................................... 4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Electrical Characteristics: DC CHARACTERISTICS VCC = +1.5V to 3.6V TA = -20C to +85C Param. Sym. Characteristic Min. Max. Units Conditions No. D1 A0, A1, A2, SCL, SDA and WP pins: D2 VIH High-level input voltage 0.7 VCC V D3 VIL Low-level input voltage 0.3 VCC V D4 VHYS Hysteresis of Schmitt 0.05 VCC V (Note) Trigger inputs (SDA, SCL pins) D5 VOL Low-level output voltage 0.40 V IOL = 3.0 mA VCC = 3.6V IOL = 2.1 mA VCC = 2.5V D6 ILI Input leakage current 1 AVIN = VSS or VCC, WP = VSS D7 ILO Output leakage current 1 AVOUT = VSS or VCC D8 CIN, Pin capacitance 10 pFVCC = 3.6V (Note) COUT (all inputs/outputs) TA = 25C, f = 1 MHz D9 ICC Read Operating current 400 AVCC = 3.6V, SCL = 400 kHz ICC Write 3 mA VCC = 3.6V D10 ICCS Standby current 1 AVCC = 3.6V, SCL = SDA = VCC WP = VSS, A0, A1, A2 = VSS Note: This parameter is periodically sampled and not 100% tested. DS22129A-page 2 2009 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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SILICON STORAGE TECHNOLOGY
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