Product Information

25AA040AT-I/SN

25AA040AT-I/SN electronic component of Microchip

Datasheet
EEPROM 4K 512X8 1.8V SER EE IND

Manufacturer: Microchip
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Price (USD)

1: USD 0.5669 ea
Line Total: USD 0.57

4124 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2910 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

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25AA040AT-I/SN
Microchip

1 : USD 0.6019
10 : USD 0.5947
25 : USD 0.5943
100 : USD 0.5936
250 : USD 0.5931
500 : USD 0.5812
1000 : USD 0.5812
3000 : USD 0.5812

4124 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

25AA040AT-I/SN
Microchip

1 : USD 0.5669
10 : USD 0.5612
25 : USD 0.5577
100 : USD 0.5531
3300 : USD 0.5531
9900 : USD 0.5531

     
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25AA040A/25LC040A 4K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25AA040A 1.8-5.5V 16 Bytes I P, MS, SN, ST, MC, OT 25LC040A 2.5-5.5V 16 Bytes I, E P, MS, SN, ST, MC, OT Features: Description: Max. clock 10 MHz The Microchip Technology Inc. 25XX040A* is a 4 Kbit Serial Electrically Erasable Programmable Read-Only Low-power CMOS technology: Memory (EEPROM). The memory is accessed via a - Max. Write Current: 5 mA at 5.5V, 10 MHz simple Serial Peripheral Interface (SPI) compatible - Read Current: 5 mA at 5.5V, 10 MHz serial bus. The bus signals required are a clock input - Standby Current: 5 A at 5.5V (SCK) plus separate data in (SI) and data out (SO) 512 x 8-bit organization lines. Access to the device is controlled through a Chip Select (CS) input. Write Page mode (up to 16 bytes) Sequential Read Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transi- Self-timed Erase and Write cycles (5 ms max.) tions on its inputs will be ignored, with the exception of Block Write protection: Chip Select, allowing the host to service higher priority - Protect none, 1/4, 1/2 or all of array interrupts. Built-in Write protection: The 25XX040A is available in standard packages - Power-on/off data protection circuitry including 8-lead PDIP and SOIC, and advanced - Write enable latch packages including 8-lead MSOP, 8-lead TSSOP - Write-protect pin and rotated TSSOP, 8-lead 2x3 DFN, and 6-lead High reliability: SOT-23. - Endurance: 1,000,000 Erase/Write cycles Package Types (not to scale) - Data retention: > 200 years TSSOP/MSOP PDIP/SOIC - ESD protection: > 4000V (ST, MS) (P, SN) Temperature ranges supported: CS 1 8 VCC 11 88 CSCS VVCCCC - Industrial (I): -40Cto +85C SO 2 7 HOLD 22 77 SOSO HOLDHOLD - Automotive (E): -40Cto +125C 33 66 WPWP SCKSCK WP 3 6 SCK 55 44 VVSSSS SISI Pb-free packages available VSS 4 5 SI DFN Pin Function Table SOT-23 (MC) (OT) Name Function 1 6 SCK VDD 1 8 VCC CS 2 5 SO 2 7 VSS CS HOLD CS Chip Select Input 3 4 SI SO 3 SCK WP 6 SO Serial Data Output VSS 4 5 SI WP Write-Protect VSS Ground X-Rotated TSSOP (X/ST) SI Serial Data Input 1 8 HOLD SCK 2 7 VCC SCK Serial Clock Input SI 3 6 CS VSS 5 4 SO WP HOLD Hold Input VCC Supply Voltage *25XX040A is used in this document as a generic part number for the 25AA040A and the 25LC040A. 2006 Microchip Technology Inc. Preliminary DS21827C-page 125AA040A/25LC040A 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level Input 0.7 VCC VCC +1 V Voltage D002 VIL1 Low-level Input -0.3 0.3 VCC VVCC 2.7V (Note 1) Voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V (Note 1) D004 VOL Low-level Output 0.4 VIOL = 2.1 mA Voltage D005 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V D006 VOH High-level Output VCC -0.5 V IOH = -400 A Voltage D007 ILI Input Leakage 1 ACS = VCC, VIN = VSS TO VCC Current D008 ILO Output Leakage 1 ACS = VCC, VOUT = VSS TO VCC Current D009 CINT Internal Capacitance A = 25C, CLK = 1.0 MHz, 7 pFT (all inputs and VCC = 5.0V (Note 1) outputs) D010 ICC Read 5 mA VCC = 5.5V FCLK = 10.0 MHz SO = Open Operating Current 2.5 mA VCC = 2.5V FCLK = 5.0 MHz SO = Open D011 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D012 ICCS 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, TA = +125C 1 A CS = VCC = 2.5V, Inputs tied to VCC or VSS, TA = +85C Note 1: This parameter is periodically sampled and not 100% tested. DS21827C-page 2 Preliminary 2006 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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