25LC080DT-E/MNY Microchip

25LC080DT-E/MNY electronic component of Microchip
25LC080DT-E/MNY Microchip
25LC080DT-E/MNY EEPROM
25LC080DT-E/MNY  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 25LC080DT-E/MNY EEPROM across the USA, India, Europe, Australia, and various other global locations. 25LC080DT-E/MNY EEPROM are a product manufactured by Microchip. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

Part No. 25LC080DT-E/MNY
Manufacturer: Microchip
Category: EEPROM
Description: EEPROM 8K 1K X 8 32B PAGE 2.5V SER EE EXT
Datasheet: 25LC080DT-E/MNY Datasheet (PDF)
Price (USD)
1: USD 0.9063 ea
Line Total: USD 0.91 
Availability : 1024
  
Ship by Fri. 07 Nov to Tue. 11 Nov
QtyUnit Price
1$ 0.9063
25$ 0.858
100$ 0.7865
3300$ 0.7865

Availability 1024
Ship by Fri. 07 Nov to Tue. 11 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9063
25$ 0.858
100$ 0.7865
3300$ 0.7865

   
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We are delighted to provide the 25LC080DT-E/MNY from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 25LC080DT-E/MNY and other electronic components in the EEPROM category and beyond.

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25AA080C/D, 25LC080C/D 8K SPI Bus Serial EEPROM Device Selection Table Part Number VCC Range Page Size Temp. Ranges Packages 25LC080C 2.5-5.5V 16 Byte I, E P, SN, ST, MS, MN 25AA080C 1.8-5.5V 16 Byte I P, SN, ST, MS, MN 25LC080D 2.5-5.5V 32 Byte I, E P, SN, ST, MS, MN 25AA080D 1.8-5.5V 32 Byte I P, SN, ST, MS, MN Features: Description: Max. Clock 10 MHz The Microchip Technology Inc. 25AA080C/D, * 25LC080C/D (25XX080C/D ) are 8 Kbit Serial Electri- Low-Power CMOS Technology: cally Erasable PROMs. The memory is accessed via a - Max. write current: 5 mA at 5.5V simple Serial Peripheral Interface (SPI) compatible - Read current: 5 mA at 5.5V, 10 MHz serial bus. The bus signals required are a clock input - Standby current: 5 A at 5.5V (SCK) plus separate data in (SI) and data out (SO) 1024 x 8-bit Organization lines. Access to the device is controlled through a Chip Select (CS) input. 16 Byte Page (C version devices) 32 Byte Page (D version devices) Communication to the device can be paused via the hold pin (HOLD). While the device is paused, transi- Self-Timed Erase and Write Cycles (5 ms max.) tions on its inputs will be ignored, with the exception of Block Write Protection: Chip Select, allowing the host to service higher priority - Protect none, 1/4, 1/2 or all of array interrupts. Built-In Write Protection: The 25XX080C/D is available in standard packages - Power-on/off data protection circuitry including 8-lead PDIP and SOIC, and advanced pack- - Write enable latch aging including 8-lead MSOP, TSSOP, and 2x3 TDFN. - Write-protect pin All packages are Pb-free and RoHS compliant. Sequential Read High Reliability: Package Types (not to scale) - Endurance: > 1M erase/write cycles TSSOP/MSOP PDIP/SOIC - Data retention: > 200 years (ST, MS) (P, SN) - ESD protection: > 4000V 1 8 CS VCC CS 1 8 VCC Pb-Free and RoHS Compliant 2 7 SO HOLD SO 2 7 HOLD 3 6 WP SCK Temperature Ranges Supported: 5 4 VSS SI WP 3 6 SCK - Industrial (I): -40Cto +85 C VSS 4 5 SI - Automotive (E): -40C to +125C TDFN (MN) 1 CS 8 VCC 2 SO 7 HOLD 3 WP 6 SCK 4 VSS 5 SI *25XX080C/D is used in this document as a generic part number for the 25AA080C/D, 25LC080C/D. 2009-2012 Microchip Technology Inc. DS22151B-page 125XX080C/D 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................6.5V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 0.7 VCC VCC+1 V voltage D002 VIL1 Low-level input -0.3 0.3 VCC VVCC 2.7V voltage D003 VIL2 -0.3 0.2 VCC VVCC < 2.7V D004 VOL1 Low-level output 0.4 VIOL = 2.1 mA voltage D005 VOL2 0.2 VIOL = 1.0 mA, VCC < 2.5V D006 VOH High-level output VCC-0.5 V IOH = -400 A voltage D007 ILI Input leakage current 1 ACS = VCC, VIN = VSS OR VCC D008 ILO Output leakage 1 ACS = VCC, VOUT = VSS OR VCC current D009 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D010 ICC Read 5 mA VCC = 5.5V FCLK = 10.0 MHz SO = Open Operating Current 2.5 mA VCC = 2.5V FCLK = 5.0 MHz SO = Open D011 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D012 Iccs 5 A CS = VCC = 5.5V, Inputs tied to VCC or Standby Current VSS, TA = +125C 1 A CS = VCC = 5.5V, Inputs tied to VCC or VSS, TA = +85C Note: This parameter is periodically sampled and not 100% tested. DS22151B-page 2 2009-2012 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
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MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
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Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
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Microchip Technology / Micrel
MICROCHIPDIRECT
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Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
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Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
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Microsemi SoC
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MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi
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