Product Information

25LC320T-ESN

25LC320T-ESN electronic component of Microchip

Datasheet
Microchip Technology EEPROM 4kx8

Manufacturer: Microchip
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Price (USD)

1: USD 1.0166 ea
Line Total: USD 1.02

6059 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9603 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 3300
Multiples : 3300

Stock Image

25LC320T-ESN
Microchip

3300 : USD 1.0753

6059 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

Stock Image

25LC320T-ESN
Microchip

1 : USD 1.0166
10 : USD 1.0086
25 : USD 0.9948
100 : USD 0.9568
3300 : USD 0.9568

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
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Maximum Clock Frequency
Access Time
Data Retention
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Programming Voltage
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Taric
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Not recommended for new designs Please use 25AA320A or 25LC320A. 25AA320/25LC320/25C320 32K SPI Bus Serial EEPROM Device Selection Table Description: Part VCC Max. Clock Temp. The Microchip Technology Inc. 25AA320/25LC320/ * Number Range Frequency Ranges 25C320 (25XX320) are 32 Kbit serial Electrically Erasable PROMs. The memory is accessed via a 25AA320 1.8-5.5V 1 MHz I simple Serial Peripheral Interface (SPI) compatible 25LC320 2.5-5.5V 2 MHz I,E serial bus. The bus signals required are a clock input 25C320 4.5-5.5V 3 MHz I,E (SCK) plus separate data in (SI) and data out (SO) lines. Access to the device is controlled through a Chip Select (CS) input. Features: Communication to the device can be paused via the Low-Power CMOS Technology: hold pin (HOLD). While the device is paused, - Write current: 3 mA maximum transitions on its inputs will be ignored, with the - Read current: 500 A, typical exception of Chip Select, allowing the host to service - Standby current: 500 nA, typical higher priority interrupts. 4096 x 8 Bit Organization 32 Byte Page Block Diagram Write Cycle Time: 5 ms Maximum STATUS HV Generator Register Self-Timed Erase and Write Cycles Block Write Protection: - Protect none, 1/4, 1/2 or all of array Built-in Write Protection: - Power on/off data protection circuitry EEPROM Memory I/O Control Array - Write enable latch Control XDEC Logic Logic - Write-protect pin Sequential Read Page Latches High Reliability: - Endurance: 1M E/W cycles SI - Data retention: > 200 years SO Y Decoder - ESD protection: > 4000V CS 8-Pin PDIP, SOIC and TSSOP Packages SCK 14-Lead TSSOP Package Sense Amp. HOLD Temperature Ranges Supported: R/W Control WP - Industrial (I): -40Cto +85C VCC - Automotive (E): -40C to +125C VSS Package Types PDIP, SOIC TSSOP TSSOP 1 14 VCC CS CS 1 8 VCC 1 8 HOLD SCK 2 13 SO HOLD 2 7 3 12 SO 2 7 HOLD NC NC VCC SI 4 11 NC NC WP 3 6 SCK 3 6 CS VSS 510 NC NC 6 9 WP SCK 4 5 VSS 4 5 SI SO WP 78 VSS SI *25XX320 is used in this document as a generic part number for the 25AA320/25LC320/25C320 devices. 2008 Microchip Technology Inc. DS21227F-page 1 25XX320 25XX320 25XX32025AA320/25LC320/25C320 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................ -0.6V to VCC + 1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-40C to 125C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability. TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E):TA = -40C to +125C VCC = 2.5V to 5.5V Param. Sym. Characteristics Min. Max. Units Conditions No. D1 VIH1 High-level input 2.0 VCC+1 V VCC 2.7V (Note) voltage D2 VIH2 0.7 VCC VCC+1 V VCC< 2.7V (Note) D3 VIL1 Low-level input -0.3 0.8 V VCC 2.7V (Note) voltage D4 VIL2 -0.3 0.3 VCC VVCC < 2.7V (Note) D5 VOL Low-level output 0.2 VIOL = 1.0 mA, VCC < 2.5V voltage D6 VOH High-level output VCC -0.5 V IOH = -400 A voltage D7 ILI Input leakage current 1 ACS = VCC, VIN = VSS TO VCC D8 ILO Output leakage 1 ACS = VCC, VOUT = VSS TO VCC current D9 CINT Internal Capacitance 7 pFTA = 25C, CLK = 1.0 MHz, (all inputs and VCC = 5.0V (Note) outputs) D10 ICC Read Operating Current 1 mA VCC = 5.5V FCLK = 3.0 MHz 500 A SO = Open VCC = 2.5V FCLK = 2.0 MHz SO = Open D11 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D12 ICCS Standby Current 5 A CS = VCC = 5.5V, Inputs tied to VCC or 1 A VSS CS = VCC = 2.5V, Inputs tied to VCC or VSS Note: This parameter is periodically sampled and not 100% tested. DS21227F-page 2 2008 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
AT9
ATM
Atmel
Atmel Wireless (VA)
M4S
M6S
M8S
M9S
MCP
Micrel
Micrel Inc
MICREL SEMICONDUCTOR
MICREL SYNERGY SEMI
MICROCHIP (ATMEL)
MICROCHIP (MICREL)
MICROCHIP (MICROSEMI)
MICROCHIP (SUPERTEX)
Microchip / Microsemi
Microchip / Vectron
Microchip Tech
MICROCHIP TECH.
Microchip Technology
Microchip Technology Micrel
Microchip Technology / Atmel
Microchip Technology / Micrel
MICROCHIPDIRECT
MICROSEMI
Microsemi Analog Mixed Signal Group
Microsemi Analog Mixed Signal Group [MIL]
Microsemi Commercial Components Group
MICROSEMI COMMUNICATIONS INC.
Microsemi Consumer Medical Product Group
Microsemi Corporation
Microsemi FTD
Microsemi Power Management Group
Microsemi Power Products Group
Microsemi SoC
MICROSEMI/LAWRENCE
MICROSEMI/LINFINITY
MSC
Roving Networks
ROVING NETWORKS INC
ROVING NETWORKS INC.
ROVING NETWORKS, INC.
Silicon Storage
SILICON STORAGE TECH
SILICON STORAGE TECHNOLOGY
Supertex
Vectron
VECTRON INTERNATIONAL
VECTRON INTL
Vitesse Microsemi
Vitesse / Microsemi

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