Product Information

93C76-EP

93C76-EP electronic component of Microchip

Datasheet
Microchip Technology EEPROM 516x8 Or 1024x8
Manufacturer: Microchip
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Price (USD)

1: USD 1.7829 ea
Line Total: USD 1.78

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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93C76-EP
Microchip

1 : USD 1.472
25 : USD 1.4375
120 : USD 1.38

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Additional Infomation About Product

93C76/86 93C76/86 Not recommended for new designs Please use 93LC76C or 93LC86C. 93C76/86 8K/16K 5.0V Microwire Serial EEPROM Features: Package Types Single 5.0V supply PDIP Package Low-power CMOS technology - 1 mA active current typical ORG pin selectable memory configuration 8 CS 1 VCC 1024 x 8- or 512 x 16-bit organization (93C76) 7 PE CLK 2 2048 x 8- or 1024 x 16-bit organization (93C86) 6 DI 3 ORG Self-timed erase and write cycles 5 4 DO VSS (including auto-erase) Automatic ERAL before WRAL Power on/off data protection circuitry SOIC Package Industry standard 3-wire serial I/O Device status signal during erase/write cycles 8 1 Sequential read function CS VCC 7 2 CLK PE 1,000,000 erase/write cycles ensured 6 ORG 3 DI Data retention > 200 years 5 VSS DO 4 8-pin PDIP/SOIC package Temperature ranges supported - Commercial (C): 0C to +70C - Industrial (I): -40C to +85C Block Diagram - Automotive (E) -40C to +125C VCC VSS Description: The Microchip Technology Inc. 93C76/86 are 8K and Address Memory 16K low voltage serial Electrically Erasable PROMs. Decoder Array The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology makes these devices ideal for low power Address nonvolatile memory applications. These devices also Counter have a Program Enable (PE) pin to allow the user to write protect the entire contents of the memory array. The 93C76/86 is available in standard 8-pin PDIP and Data Output 8-pin surface mount SOIC packages. DO Register Buffer DI Mode Decode PE Logic CS Clock CLK Generator 2004 Microchip Technology Inc. DS21132E-page 193C76/86 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ........................................................................................................-0.6V to Vcc + 1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C Soldering temperature of leads (10 seconds) .......................................................................................................+300C ESD protection on all pins..........................................................................................................................................4 kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. 1.1 AC Test Conditions AC Waveform: VLO = 2.0V VHI = Vcc - 0.2V (Note 1) VHI = 4.0V for (Note 2) Timing Measurement Reference Level Input 0.5 VCC Output 0.5 VCC Note 1: For VCC 4.0V 2: For VCC > 4.0V DS21132E-page 2 2004 Microchip Technology Inc.

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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Vitesse Microsemi
Vitesse / Microsemi

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