Product Information

93LC66CT-I/ST

93LC66CT-I/ST electronic component of Microchip

Datasheet
Memory; EEPROM; Microwire; 512x8/256x16bit; 2.5÷5.5V; 3MHz; TSSOP8

Manufacturer: Microchip
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Price (USD)

2500: USD 0.358 ea
Line Total: USD 895

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

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93LC66CT-I/ST
Microchip

2500 : USD 0.358

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1

Stock Image

93LC66CT-I/ST
Microchip

3 : USD 0.658
10 : USD 0.588
25 : USD 0.518
86 : USD 0.49

     
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93AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 4K Microwire Compatible Serial EEPROM Device Selection Table Part Number VCC Range ORG Pin Word Size Temp Ranges Packages 93AA66A 1.8-5.5 No 8-bit I P, SN, ST, MS, OT 93AA66B 1.8-5-5 No 16-bit I P, SN, ST, MS, OT 93LC66A 2.5-5.5 No 8-bit I, E P, SN, ST, MS, OT 93LC66B 2.5-5.5 No 16-bit I, E P, SN, ST, MS, OT 93C66A 4.5-5.5 No 8-bit I, E P, SN, ST, MS, OT 93C66B 4.5-5.5 No 16-bit I, E P, SN, ST, MS, OT 93AA66C 1.8-5.5 Yes 8 or 16-bit I P, SN, ST, MS 93LC66C 2.5-5.5 Yes 8 or 16-bit I, E P, SN, ST, MS 93C66C 4.5-5.5 Yes 8 or 16-bit I, E P, SN, ST, MS Features Description Low-power CMOS technology The Microchip Technology Inc. 93XX66A/B/C devices are 4K bit low voltage serial Electrically Erasable ORG pin to select word size for 66C version PROMs (EEPROM). Word-selectable devices such as 512 x 8-bit organization A ver. devices (no ORG) the 93AA66C, 93LC66C or 93C66C are dependent 256 x 16-bit organization B ver. devices (no upon external logic levels driving the ORG pin to set ORG) word size. For dedicated 8-bit communication, the Self-timed ERASE/WRITE cycles (including 93AA66A, 93LC66A or 93C66A devices are available, auto-erase) while the 93AA66B, 93LC66B and 93C66B devices Automatic ERAL before WRAL provide dedicated 16-bit communication. Advanced CMOS technology makes these devices ideal for low Power on/off data protection circuitry power, non-volatile memory applications. The entire Industry standard 3-wire serial I/O 93XX Series is available in standard packages includ- Device Status signal (READY/BUSY ) ing 8-lead PDIP and SOIC, and advanced packaging Sequential READ function including 8-lead MSOP, 6-lead SOT-23, and 8-lead 1,000,000 E/W cycles TSSOP. Pb-free (Pure Matte Sn) finish is also Data retention > 200 years available. Temperature ranges supported: Package Types (not to scale) - Industrial (I) -40C to +85C ROTATED SOIC PDIP/SOIC - Automotive (E) -40C to +125C (ex: 93LC66BX) (P, SN) Pin Function Table NC 1 8 ORG* CS 1 8 VCC VCC 2 7 VSS CLK 2 7 NC Name Function CS 3 6 DO DI 3 6 ORG* CS Chip Select CLK 4 5 DI DO 4 5 VSS CLK Serial Data Clock TSSOP/MSOP SOT-23 (ST, MS) DI Serial Data Input (OT) DO Serial Data Output 1 8 CS VCC 1 6 DO VCC 2 7 CLK NC 3 6 DI ORG* 2 5 VSS Ground VSS CS 5 4 DO VSS 3 4 DI CLK NC No internal connection * ORG pin is NC on A/B devices ORG Memory Configuration VCC Power Supply 2003 Microchip Technology Inc. DS21795B-page 193AA66A/B/C, 93LC66A/B/C, 93C66A/B/C 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS ......................................................................................................... -0.6V to VCC +1.0V Storage temperature ...............................................................................................................................-65C to +150C Ambient temperature with power applied................................................................................................-40C to +125C ESD protection on all pins ...................................................................................................................................................... 4kV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. TABLE 1-1: DC CHARACTERISTICS VCC = range by device (see Table on Page 1) All parameters apply over the specified Industrial (I): TA = -40C to +85C ranges unless otherwise noted. Automotive (E): TA = -40C to +125C Param. Symbol Parameter Min Typ Max Units Conditions No. D1 VIH1 High-level input voltage 2.0 VCC +1 V VCC 2.7V VIH2 0.7 VCC VCC +1 V VCC < 2.7V D2 VIL1 Low-level input voltage -0.3 0.8 V VCC 2.7V VIL2 -0.3 0.2 VCC V VCC < 2.7V D3 VOL1 Low-level output voltage 0.4 V IOL = 2.1 mA, VCC = 4.5V VOL2 0.2 V IOL = 100 A, VCC = 2.5V D4 VOH1 High-level output voltage 2.4 V IOH = -400 A, VCC = 4.5V VOH2 VCC - 0.2 V IOH = -100 A, VCC = 2.5V D5 ILI Input leakage current 1 AVIN = VSS to VCC D6 ILO Output leakage current 1 AVOUT = VSS to VCC D7 CIN, Pin capacitance (all inputs/ 7 pFVIN/VOUT = 0V (Note 1) COUT outputs) TA = 25C, FCLK = 1 MHz D8 ICC write Write current 2 mA FCLK = 3 MHz, Vcc = 5.5V 500 A FCLK = 2 MHz, Vcc = 2.5V CC read Read current CLK = 3 MHz, VCC = 5.5V D9 I 1 mA F 500 A FCLK = 2 MHz, VCC = 3.0V 100 A FCLK = 2 MHz, VCC = 2.5V D10 ICCS Standby current 1 A I Temp 5 A E Temp CLK = Cs = 0V ORG = DI = VSS or VCC (Note 2) (Note 3) D11 VPOR VCC voltage detect 93AA66A/B/C, 93LC66A/B/C 1.5V V (Note 1) 93C66A/B/C 3.8V V Note 1: This parameter is periodically sampled and not 100% tested. 2: ORG pin not available on A or B versions. 3: READY/BUSY status must be cleared from DO, see Section 3.4Data Out (DO. DS21795B-page 2 2003 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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